Laser Ordering in Elemental Semiconducting Films

  • L. D. Laude
  • R. Andrew
  • L. Baufay
Part of the NATO Advanced Study Institutes Series book series (NSSB, volume 84)


Laser treatment of semiconducting films which are deposited onto fused silica or, else, NaCl crystal before being flotted off and irradiated, is far from being comparable with the annealing process for ion-implanted layers 1 . In the latter, the single crystal substrate induces an epitaxial growth in the implanted layer which overshadows the first step of the Laser-induced ordering. In free-standing semiconducting films or in semiconducting films which are deposited onto fused silica or any amorphous substrate, more insight is probably achieved in this first step and it is the object of this paper to give some overviews on Laser-induced ordering processes in these films.


Star Formation Pulse Laser Irradiation Pulse Regime Large Crystallite Fuse Silica Substrate 
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  1. 1.
    See, for instance, the Proceedings of the E.P.S. study Conference on Laser-Induced Nucleation in Solids, Mons, 4–6 Oct. 1979, in J. de Physique C4 -p. l to 112.Google Scholar
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  3. 3.
    R. Andrew and M. Lovato, J. Appl. Phys. 50, ll42 (1979) ; and M. Lovato, unpublished.CrossRefGoogle Scholar
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    M. Lovato, M. Wautelet and L.D. Laude, Appl. Phys. Letters, 34, l6O (1979).CrossRefGoogle Scholar
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Copyright information

© Plenum Press, New York 1983

Authors and Affiliations

  • L. D. Laude
    • 1
  • R. Andrew
    • 1
  • L. Baufay
    • 1
  1. 1.Faculté des SciencesUniversité de l’Etat à MonsMonsBelgium

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