Thick Noble Gas Targets Prepared by Ion Implantation
Targets of up to 5 μgcm-2 He and 15 μgcm-2 Ne have been prepared by ion implantation into Ta. In order to achieve the large doses, the targets were cooled to 77°K during the implantation and the beam was swept over the target to avoid hot spots. The energy used was 60 keV at currents in the region of 6 μAcm-2.
The technique of preparing nuclear bombardment targets by ion implantation is not new(1, 2), but has not been widely used because the amount of implanted material which may be collected is small compared with conventional target preparation techniques. In the case of inert gases, however, implantation is the only method available for preparing foil type targets, and so it would be desirable to try to increase the amounts of these materials which may be collected.
This paper is a preliminary report of the work in progress at this laboratory to prepare targets of inert gases, particularly He and Ne, containing useful concentrations of target material.
KeywordsSurface Barrier Detector Outer Peak Backscatter Particle Large Energy Loss Helium Irradiation
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