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The Effect of Oxygen Partial Pressure on the Wetting of SiC, AlN, and Si3N4 by Si and a Method for Calculating the Surface Energies Involved

  • Michel W. Barsoum
  • P. Darrell Ownby
Part of the Materials Science Research book series (MSR, volume 14)

Abstract

The degree to which molten silicon wets a solid, and reacts chemically and physically with it, determines the solid’s usefulness as a die or container material. It is the purpose of this work to show that the oxygen partial pressure in the environment is an important factor in determining the degree to which solids are wetted by liquid silicon. Of particular interest is the PO2 range below where SiO2 is formed. In a recent study1 the authors have demonstrated that the oxygen activity in this range is very significant in determining both the chemical and physical interaction and the contact angle between liquid silicon and some refractory solids. The PO2 dependence of the contact angle is then used to calculate the solid surface energies.

Keywords

Contact Angle Surface Energy Oxygen Partial Pressure Sessile Drop Liquid Silicon 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Plenum Press, New York 1981

Authors and Affiliations

  • Michel W. Barsoum
    • 1
  • P. Darrell Ownby
    • 1
  1. 1.Department of Ceramic EngineeringUniversity of Missouri-RollaRollaUSA

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