Stability Studies of the Chlorine Containing Phase at the SiO2/Si Interface Produced by HCl/O2 Oxidation of Silicon
SiO2/Si samples prepared in 2% and 4% hcl/O2 mixtures at 1200°C have been annealed in H2O/N2 ambients at 1200°C. The anneals ranged up to 16 hrs in ambients with 4 or 40 ppm H2O in N2. Rutherford backscattering measurements have been made to determine the amount and location of C1 incorporated in these samples. A linear loss of C1 with annealing time is found for all samples. Changes in the distribution of C1 near the SiO2/Si interface are found. These changes are interpreted in terms of morphological changes in the third (Cl containing)phase. A significant effect of the H2O content of the N2 ambient is observed.
KeywordsAnnealing Time Rutherford Backscattering Spectrometry Unannealed Sample Rutherford Backscattering Spectrometry Spectrum Energy Straggling
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