Abstract
In the use of thermally grown oxides on silicon for the fabrication of metal-oxide-semiconductor (MOS) devices, mobile alkali ions introduced as contaminants adversely affect electrical stability. It has been found, however, that through the use of a gas containing chlorine in the oxidizing atmosphere, the alkali ions can be trapped and neutralized providing stable devices. But although the electrical properties of these chlorinated oxides have been well characterized,1 the understanding from a materials perspective is not yet complete. This paper will attempt to add to that understanding through a description of observations of the oxidation process and their rationalization in a proposed model.
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References
See for example, J. Monkowski, R. E. Tressler, and J. Stach, Correlations between the electrical and material properties of silicon oxides grown in chlorine-containing ambients, Thin Solid Films, 65:153 (1980).
J. Monkowski, J. Stach, and R. E. Tressler, Phase separation and sodium passivation in silicon oxides grown in HCI/O2 ambients, J. Electrochem. Soc., 126:1129 (1979).
J. Monkowski, R. E. Tressler, and J. Stach, The structure and composition of silicon oxides grown in HCI/O2 ambients, J. Electrochem. Soc., 125:1867 (1978).
See for example, I. S. T. Tsong, M. D. Monkowski, J. R. Monkowski, P. D. Miller, C. D. Moak, B. R. Appleton, and A. L. Wintenberg, Investigation of hydrogen and chlorine at the SiO2/Si interface, International Conference on the Physics of MOS Insulators, Raleigh, 1980 (proceedings in press).
J. Monkowski, J. Stach, and R. E. Tressler, A model of silicon oxidation in chlorine-containing ambients: competition between two oxidants, 30th IEEE Electronic Components Conference, San Francisco, 61 (1980).
B. E. Deal and A. S. Grove, General relationship for the thermal oxidation of silicon, J. Appl. Phys., 36:3770 (1965).
R. E. Tressler, J. Stach, and D. M. Metz, Gas phase composition considerations in the thermal oxidation of silicon in Cl-H-O ambients, J. Electrochem. Soc., 124:607 (1977).
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W. C. Schumb, The halides and oxyhalides of silicon, Chem. Rev., 31:587 (1942).
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© 1981 Plenum Press, New York
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Monkowski, M.D., Monkowski, J., Tressler, R.E., Stach, J. (1981). Chlorine Incorporation and Phase Separation at the SiO2/Si Interface During Thermal Oxidation of Silicon in Cl/O2 Atmospheres. In: Pask, J., Evans, A. (eds) Surfaces and Interfaces in Ceramic and Ceramic — Metal Systems. Materials Science Research, vol 14. Springer, Boston, MA. https://doi.org/10.1007/978-1-4684-3947-2_31
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DOI: https://doi.org/10.1007/978-1-4684-3947-2_31
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