Chlorine Incorporation and Phase Separation at the SiO2/Si Interface During Thermal Oxidation of Silicon in Cl/O2 Atmospheres
In the use of thermally grown oxides on silicon for the fabrication of metal-oxide-semiconductor (MOS) devices, mobile alkali ions introduced as contaminants adversely affect electrical stability. It has been found, however, that through the use of a gas containing chlorine in the oxidizing atmosphere, the alkali ions can be trapped and neutralized providing stable devices. But although the electrical properties of these chlorinated oxides have been well characterized,1 the understanding from a materials perspective is not yet complete. This paper will attempt to add to that understanding through a description of observations of the oxidation process and their rationalization in a proposed model.
KeywordsThermal Oxidation Silica Film Si02 Film Longe Oxidation Time Chlorine Partial Pressure
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- 4.See for example, I. S. T. Tsong, M. D. Monkowski, J. R. Monkowski, P. D. Miller, C. D. Moak, B. R. Appleton, and A. L. Wintenberg, Investigation of hydrogen and chlorine at the SiO2/Si interface, International Conference on the Physics of MOS Insulators, Raleigh, 1980 (proceedings in press).Google Scholar
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