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Chlorine Incorporation and Phase Separation at the SiO2/Si Interface During Thermal Oxidation of Silicon in Cl/O2 Atmospheres

  • M. D. Monkowski
  • J. Monkowski
  • R. E. Tressler
  • J. Stach
Part of the Materials Science Research book series (MSR, volume 14)

Abstract

In the use of thermally grown oxides on silicon for the fabrication of metal-oxide-semiconductor (MOS) devices, mobile alkali ions introduced as contaminants adversely affect electrical stability. It has been found, however, that through the use of a gas containing chlorine in the oxidizing atmosphere, the alkali ions can be trapped and neutralized providing stable devices. But although the electrical properties of these chlorinated oxides have been well characterized,1 the understanding from a materials perspective is not yet complete. This paper will attempt to add to that understanding through a description of observations of the oxidation process and their rationalization in a proposed model.

Keywords

Thermal Oxidation Silica Film Si02 Film Longe Oxidation Time Chlorine Partial Pressure 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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References

  1. 1.
    See for example, J. Monkowski, R. E. Tressler, and J. Stach, Correlations between the electrical and material properties of silicon oxides grown in chlorine-containing ambients, Thin Solid Films, 65:153 (1980).CrossRefGoogle Scholar
  2. 2.
    J. Monkowski, J. Stach, and R. E. Tressler, Phase separation and sodium passivation in silicon oxides grown in HCI/O2 ambients, J. Electrochem. Soc., 126:1129 (1979).CrossRefGoogle Scholar
  3. 3.
    J. Monkowski, R. E. Tressler, and J. Stach, The structure and composition of silicon oxides grown in HCI/O2 ambients, J. Electrochem. Soc., 125:1867 (1978).CrossRefGoogle Scholar
  4. 4.
    See for example, I. S. T. Tsong, M. D. Monkowski, J. R. Monkowski, P. D. Miller, C. D. Moak, B. R. Appleton, and A. L. Wintenberg, Investigation of hydrogen and chlorine at the SiO2/Si interface, International Conference on the Physics of MOS Insulators, Raleigh, 1980 (proceedings in press).Google Scholar
  5. 5.
    J. Monkowski, J. Stach, and R. E. Tressler, A model of silicon oxidation in chlorine-containing ambients: competition between two oxidants, 30th IEEE Electronic Components Conference, San Francisco, 61 (1980).Google Scholar
  6. 6.
    B. E. Deal and A. S. Grove, General relationship for the thermal oxidation of silicon, J. Appl. Phys., 36:3770 (1965).CrossRefGoogle Scholar
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    R. E. Tressler, J. Stach, and D. M. Metz, Gas phase composition considerations in the thermal oxidation of silicon in Cl-H-O ambients, J. Electrochem. Soc., 124:607 (1977).CrossRefGoogle Scholar
  8. 8.
    D. W. Hess and B. E. Deal, Kinetics of the thermal oxidation of silicon in O2/HCI mixtures, J. Electrochem. Soc., 124:735 (1977).CrossRefGoogle Scholar
  9. 9.
    W. C. Schumb, The halides and oxyhalides of silicon, Chem. Rev., 31:587 (1942).CrossRefGoogle Scholar

Copyright information

© Plenum Press, New York 1981

Authors and Affiliations

  • M. D. Monkowski
    • 1
  • J. Monkowski
    • 1
  • R. E. Tressler
    • 1
  • J. Stach
    • 1
  1. 1.Departments of Material Science and Electrical EngineeringThe Pennsylvania State UniversityUniversity ParkUSA

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