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Electron Spectroscopy Studies of the Si-SiO2 Interface

  • C. R. Helms
Part of the Materials Science Research book series (MSR, volume 14)

Abstract

Electron spectroscopy has been used extensively for studies of the chemistry, morphology, and electronic structure, of the interface between single crystal silicon and thermally grown oxides as used in silicon integrated circuit technology. Results from these investigations, along with those from other techniques such as transmission electron microscopy,1, 2, 3 Rutherford backscattering,4, 5 and ellipsometry,6, 7 as well as the various electrical techniques,8 have provided us with probably a more detailed view of this interface than for any other solid-solid interface.

Keywords

Silicon Atom Auger Electron Spectroscopy Electron Spectroscopy Depth Resolution Interface Width 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Plenum Press, New York 1981

Authors and Affiliations

  • C. R. Helms
    • 1
  1. 1.Stanford Electronics Laboratories Electrical Engineering DepartmentStanford UniversityStanfordUSA

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