Electron Spectroscopy Studies of the Si-SiO2 Interface

  • C. R. Helms
Part of the Materials Science Research book series (MSR, volume 14)


Electron spectroscopy has been used extensively for studies of the chemistry, morphology, and electronic structure, of the interface between single crystal silicon and thermally grown oxides as used in silicon integrated circuit technology. Results from these investigations, along with those from other techniques such as transmission electron microscopy,1, 2, 3 Rutherford backscattering,4, 5 and ellipsometry,6, 7 as well as the various electrical techniques,8 have provided us with probably a more detailed view of this interface than for any other solid-solid interface.


Silicon Atom Auger Electron Spectroscopy Electron Spectroscopy Depth Resolution Interface Width 
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  1. 1.
    O.L. Krivanek, this volumeGoogle Scholar
  2. 2.
    O.L. Krivanek, T.T. Sheng, & D.C. Tsui, Appl. Phys. Letts. 32, 439 (1978)CrossRefGoogle Scholar
  3. 3.
    J. Blanc, C.J. Buiocchi, M.S. Abrams & M.E. Ham, Appl. Phys. Lett. 30, 120(1977)CrossRefGoogle Scholar
  4. 4.
    L.C. Feldman, P.J. Silverman, J.S. Williams, T.E. Jackson & I. Stensgaard, Phys. Rev. Lett. 41, 1396(1978)CrossRefGoogle Scholar
  5. 5.
    T.W. Sigmon, W.K. Chu, E. Lugujjo & J.W. Mayer, Appl. Phys. Lett. 24, 105(1974)CrossRefGoogle Scholar
  6. 6.
    D.E. Aspnes & J.B. Theeten, J. Electrochem. Soc. 127 1359 (1980)CrossRefGoogle Scholar
  7. 7.
    E. Taft & L. Cordes, J. Electrochem. Soc. 126, 131(1979)CrossRefGoogle Scholar
  8. 8.
    See, for example, D. W. Hess, this volumeGoogle Scholar
  9. 9.
    CR. Helms, N.M. Johnson, S.A. Schwarz & W.E. Spicer, J. Appl. Phys. 50, 7007(1979)CrossRefGoogle Scholar
  10. 10.
    C.R. Helms, W.E. Spicer & N.M. Johnson, Solid State Comm. 25, 673(1978)CrossRefGoogle Scholar
  11. 11.
    S.A. Schwarz & C.R. Helms, J. Vac. Sci. Tech. 16, 781(1979)CrossRefGoogle Scholar
  12. 12.
    C.R. Helms, Y.E. Strausser & W.E. Spicer, Appl. Phys. Lett. 33, 767(1978)CrossRefGoogle Scholar
  13. 13.
    F.J. Grunthaner, P.J. Grunthaner, R.P. Vasquez, B.F. Lewis, J. Maserjian and A. Madhukar, J. Vac. Sci. Tech. 16, 1443(1979)CrossRefGoogle Scholar
  14. 14.
    C.R. Helms, J. Vac. Sci. Tech. 16, 608(1979)CrossRefGoogle Scholar
  15. 15.
    F. Herman, I.P. Batra & R.V. Kasowski, “The Physics of SiO2 and Its Interfaces” edited by S.T. Pantelides (Pergamon, New York) p. 333Google Scholar
  16. 16.
    J.F. Wager & C.W. Wilmsen, J. Appl. Phys. 50, 874(1979)CrossRefGoogle Scholar
  17. 17.
    C.C. Chang in “Semiconductor Characterization Techniques” P.A. Barnes & G.A. Rozgonyi, Eds, p. 106, The Electrochemical Society Softbound Proceedings Series, Princeton, N.J. (1978)Google Scholar

Copyright information

© Plenum Press, New York 1981

Authors and Affiliations

  • C. R. Helms
    • 1
  1. 1.Stanford Electronics Laboratories Electrical Engineering DepartmentStanford UniversityStanfordUSA

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