Electron Spectroscopy Studies of the Si-SiO2 Interface
Electron spectroscopy has been used extensively for studies of the chemistry, morphology, and electronic structure, of the interface between single crystal silicon and thermally grown oxides as used in silicon integrated circuit technology. Results from these investigations, along with those from other techniques such as transmission electron microscopy,1, 2, 3 Rutherford backscattering,4, 5 and ellipsometry,6, 7 as well as the various electrical techniques,8 have provided us with probably a more detailed view of this interface than for any other solid-solid interface.
KeywordsSilicon Atom Auger Electron Spectroscopy Electron Spectroscopy Depth Resolution Interface Width
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- 1.O.L. Krivanek, this volumeGoogle Scholar
- 8.See, for example, D. W. Hess, this volumeGoogle Scholar
- 15.F. Herman, I.P. Batra & R.V. Kasowski, “The Physics of SiO2 and Its Interfaces” edited by S.T. Pantelides (Pergamon, New York) p. 333Google Scholar
- 17.C.C. Chang in “Semiconductor Characterization Techniques” P.A. Barnes & G.A. Rozgonyi, Eds, p. 106, The Electrochemical Society Softbound Proceedings Series, Princeton, N.J. (1978)Google Scholar