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The Si-SiO2 Interface: Current Understanding of Chemical and Electronic Defects

  • Dennis W. Hess
Part of the Materials Science Research book series (MSR, volume 14)

Abstract

The silicon-silicon dioxide solid state interface system has been extensively investigated over the past twenty years, primarily due to its vital importance in integrated circuit technology. Many of the studies performed have dealt with electrical characterization, with the result that electronic properties can be accurately and reproducibly controlled by process sequences. Still, most of these procedures are largely empirical, because little detailed chemical knowledge of the electronic defects is available. This paper reviews some of the relationships between electronic defects and the processing procedures utilized for integrated circuit fabrication. Ongoing theoretical and experimental research that suggests specific chemical origins for these defects is discussed. Possible common origins for certain of the charge centers are indicated.

Keywords

Electron Spin Resonance Silicon Atom Silicon Surface Electron Spin Resonance Signal Electrochemical Society 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Plenum Press, New York 1981

Authors and Affiliations

  • Dennis W. Hess
    • 1
    • 2
  1. 1.Material and Molecular Research DivisionLawrence Berkeley LaboratoryBerkeleyUSA
  2. 2.Department of Chemical EngineeringUniversity of CaliforniaBerkeleyUSA

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