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Ionized Impurity Scattering and Dielectric Enhancement of Mobility in Semiconductors and Semimetals

  • R. Resta
  • L. Resca
  • S. Rodriguez

Abstract

We generalize the Brooks-Herring theory of ionized-impurity-limited mobility in semiconductors and semimetals, in order to account for dispersive dielectric screening. In a nonzero-gap semiconductor the resulting effect is, contrary to a generalized belief, quite small. In a semimetal the effect of dispersive screening is a strong enhancement of the calculated mobility, in good agreement with the experimental data for α-Sn.

Keywords

Dielectric Function Dielectric Response Calculated Mobility Static Dielectric Constant Ionize Impurity Scattering 
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Copyright information

© Springer Science+Business Media New York 1981

Authors and Affiliations

  • R. Resta
    • 1
  • L. Resca
    • 2
    • 3
  • S. Rodriguez
    • 4
  1. 1.Laboratoire de Physiqye AppliquéeEcole Politechnique Fédérale LausanneSwitzerland
  2. 2.Instituto di FisicaUniversità di PisaItaly
  3. 3.NATO Senior Fellow at the Department of PhysicsPurdue YniversityUSA
  4. 4.Department of PhysicsPurdue UniversityWest LafayetteUSA

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