Luminescence Decay in Silicon at Low Temperatures
We present a study of the luminescence decay of free excitons and electron-hole drops performed in pure Si in a rather broad temperature range. We get the exciton and drop lifetimes but, to interpret our results, we have to consider that the excitondrop system is not spatially homogeneous. We propose also to take into account the exciton recombination at the sample surface to explain the observed non exponential exciton decay.
KeywordsDense Plasma Luminescence Decay Free Exciton Broad Temperature Range Exciting Pulse
Unable to display preview. Download preview PDF.
- 1.For a review, see J.C. Hensel, T.G. Phillips and G.A. Thomas in Solid State Physics (Edited by F. Seitz, D. Turnbull and H. Ehrenreich), Vol.32, p. 88. Academic Press, New York (1978);Google Scholar
- M. Voos and C. Benoit à la Guillaume, Optical Properties of Solids, New Developments (Edited by B.O. Seraphin), p. 143. North—Holland, Amsterdam (1976);Google Scholar
- W. Schmid: Proc. 13th Int. Conf. Phys. Semicond. Roma, 1976 (Edited by F.G. Fumi), p. 898 Tipografia Marves, Rome (1976).Google Scholar
- 6.The values of the parameters involved in the calculations done in this study are given in Ref.5 and in: P. Voisin, B. Etienne and M. Voos, Solid State Commun. 33, 541 (1980).Google Scholar
- R.B. Hammond and R.N. Silver, Appl. Phys. Lett. 36, 68 (1980), and references therein.Google Scholar