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Luminescence Decay in Silicon at Low Temperatures

  • P. Voisin
  • C. Benoit à la Guillaume
  • M. Voos

Abstract

We present a study of the luminescence decay of free excitons and electron-hole drops performed in pure Si in a rather broad temperature range. We get the exciton and drop lifetimes but, to interpret our results, we have to consider that the excitondrop system is not spatially homogeneous. We propose also to take into account the exciton recombination at the sample surface to explain the observed non exponential exciton decay.

Keywords

Dense Plasma Luminescence Decay Free Exciton Broad Temperature Range Exciting Pulse 
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References

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    For a review, see J.C. Hensel, T.G. Phillips and G.A. Thomas in Solid State Physics (Edited by F. Seitz, D. Turnbull and H. Ehrenreich), Vol.32, p. 88. Academic Press, New York (1978);Google Scholar
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    The values of the parameters involved in the calculations done in this study are given in Ref.5 and in: P. Voisin, B. Etienne and M. Voos, Solid State Commun. 33, 541 (1980).Google Scholar
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Copyright information

© Springer Science+Business Media New York 1981

Authors and Affiliations

  • P. Voisin
    • 1
  • C. Benoit à la Guillaume
    • 1
  • M. Voos
    • 1
  1. 1.Groupe de Physique des Solides de l’ENSUniversité Paris VIIParisFrance

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