Anomalous Relative Enhancement of the Intensity of Phonon Sidebands in GaP:N
The temperature variation of the integrated intensity of luminescence bands due to radiative recombination of excitons trapped at different nitrogen pair sites in GaP shows a maximum. This maximum shifts toward higher temperatures for decreasing N-N distances. The activation energy for dissociation of the (NNi- exciton) complex is very close to the binding energy for each different NNi configuration. The LO-side bands corresponding to NNi configuration show a quite different temperature dependence. The maximum of the integrated intensity for all the LO-side bands corresponding to different NNi configurations occurs at the same temperature and the activation energy for the dissociation of ((NNi-exciton)-LO) complex is the same for all different NNi configurations.
KeywordsActivation Energy Binding Energy Luminescence Spectrum Radiative Recombination Luminescence Band
Unable to display preview. Download preview PDF.