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Anomalous Relative Enhancement of the Intensity of Phonon Sidebands in GaP:N

  • H. Chang
  • C. Hirlimann
  • M. Kanehisa
  • M. Balkanski

Abstract

The temperature variation of the integrated intensity of luminescence bands due to radiative recombination of excitons trapped at different nitrogen pair sites in GaP shows a maximum. This maximum shifts toward higher temperatures for decreasing N-N distances. The activation energy for dissociation of the (NNi- exciton) complex is very close to the binding energy for each different NNi configuration. The LO-side bands corresponding to NNi configuration show a quite different temperature dependence. The maximum of the integrated intensity for all the LO-side bands corresponding to different NNi configurations occurs at the same temperature and the activation energy for the dissociation of ((NNi-exciton)-LO) complex is the same for all different NNi configurations.

Keywords

Activation Energy Binding Energy Luminescence Spectrum Radiative Recombination Luminescence Band 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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References

  1. (1).
    D.G. Thomas, J.J. Hopfield and C.J. Frosch, Phys. Rev. Lett. 15 (22) 857 (1965).ADSCrossRefGoogle Scholar
  2. (2).
    D.G. Thomas, J.J. Hopfield, Phys. Rev., 150, (2), 680 (1966).ADSCrossRefGoogle Scholar
  3. (3).
    For example, P.J. Dean, Phys. Rev. 157, (3), 655, (1967).CrossRefGoogle Scholar

Copyright information

© Springer Science+Business Media New York 1981

Authors and Affiliations

  • H. Chang
    • 1
  • C. Hirlimann
    • 1
  • M. Kanehisa
    • 1
  • M. Balkanski
    • 1
  1. 1.Laboratoire de Physique des Solides associé au C.N.R.S.Université Pierre et Marie Curie 4Paris-Cedex 05France

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