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Energy Levels of Electrons Bound to Shallow Donors in GaP

  • B. Pódör

Abstract

Energy levels of electrons bound to S, Te and Si donors in GaP were determined from Hall effect and infrared absorption measurements. From the Hall data ground state ionization energies of S, Te and Si donors, and valley-orbit splitting energies of the is states of S and Te donors were deduced. Infrared absorption lines due to transitions from the is state of the donors to p-like excited levels were observed. Several excited states were assigned on the basis of the hydrogenic effective mass theory. Thermal and optical ionization energies of S, Te and Si donors were found.

Keywords

Ionization Energy Shallow Donor Conduction Band Minimum Liquid Phase Epitaxial Donor Ground State 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Springer Science+Business Media New York 1981

Authors and Affiliations

  • B. Pódör
    • 1
  1. 1.Research Laboratory for Inorganic Chemistry of the Hungarian Academy of SciencesBudapestHungary

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