Advertisement

On the Band Gap Narrowing in Impure Silicon: Effects of Impurity Scattering

  • B. E. Sernelius
  • K. F. Berggren

Abstract

The presence of impurities in heavily doped semiconductors changes positions and shapes of the conduction and valence bands of the host. From experiments it is known that the value of the band gap is reduced as compared to that of the pure material. We present a calculation of this reduction in n-type Si. In the calculations we take into account the effects of electron-electron and electron-donor ion interaction on the energies of the valence and conduction band states within a dynamical RPA treatment.

Keywords

Valence Band Impurity Scattering High Doping Level Thomas Fermi Conduction Band State 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

Preview

Unable to display preview. Download preview PDF.

Unable to display preview. Download preview PDF.

References

  1. 1.
    R.W. Keyes, Comments in Solid State Physics 7, 149 (1977).ADSGoogle Scholar
  2. 2.
    R.A. Abram, G.J. Rees, B.L.H. Wilson, Advances in Physics 27, 799 (1978).ADSCrossRefGoogle Scholar
  3. 3.
    M. Combescot, P. Nozieres, Solid State Communications 10, 301 (1972).ADSCrossRefGoogle Scholar
  4. 4.
    J.M. Luttinger, W. Kohn, Physical Review 97, 869 (1955).ADSMATHCrossRefGoogle Scholar
  5. 5.
    J.C. Inkson, Journal of Physics C: Solid State Physics 9, 1177 (1976).ADSCrossRefGoogle Scholar
  6. 6.
    M. Balkanski, A. Aziza, E. Amzallag, Physica Status Solidi 31, 323 (1969).ADSCrossRefGoogle Scholar

Copyright information

© Springer Science+Business Media New York 1981

Authors and Affiliations

  • B. E. Sernelius
    • 1
  • K. F. Berggren
    • 1
  1. 1.Dept of Physics and Measurement TechnologyLinköping UniversityLinköpingSweden

Personalised recommendations