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Minority Carrier Traps in Electron Irradiated n-Type Germanium

  • F. Poulin
  • J. C. Bourgoin

Abstract

Minority carrier traps created by electron irradiation at room temperature in slightly doped n-type germanium have been studied using transient capacitance spectroscopy. Levels at 0.16 (H1), 0.30 (H2), 0.37 (H3) and 0.52 (H4) eV from the valence band are found. The introduction rates of these traps, from which the threshold energy for their creation is deduced, have been determined. The traps H2, H3 and H4 are found to be associated with a threshold of 30 ± 10 eV and the trap H1 with a threshold of 45 ± 5 eV. It is suggested that H1 corresponds to a level associated with the divacancy.

Keywords

Electron Energy Valence Band Threshold Energy Electron Trap Electron Irradiation 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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References

  1. 1.
    F. Poulin and J.C. Bourgoin, Revue Phys. Appl. 15, 15 (1980).CrossRefGoogle Scholar
  2. 2.
    J.C. Bourgoin, P. Ludeau and B. Massarani, Revue Phys. Appl. 11, 2791 (1976).CrossRefGoogle Scholar

Copyright information

© Springer Science+Business Media New York 1981

Authors and Affiliations

  • F. Poulin
    • 1
  • J. C. Bourgoin
    • 1
  1. 1.Groupe de Physique des Solides de l’Ecole Normale SupérieureUniversité Paris 7Paris Cedex 05France

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