Minority Carrier Traps in Electron Irradiated n-Type Germanium
Minority carrier traps created by electron irradiation at room temperature in slightly doped n-type germanium have been studied using transient capacitance spectroscopy. Levels at 0.16 (H1), 0.30 (H2), 0.37 (H3) and 0.52 (H4) eV from the valence band are found. The introduction rates of these traps, from which the threshold energy for their creation is deduced, have been determined. The traps H2, H3 and H4 are found to be associated with a threshold of 30 ± 10 eV and the trap H1 with a threshold of 45 ± 5 eV. It is suggested that H1 corresponds to a level associated with the divacancy.
KeywordsElectron Energy Valence Band Threshold Energy Electron Trap Electron Irradiation
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