Temperature Dependence of p-Type Doping in Bismuth

  • O. P. Hansen
  • J. Heremans


Four tin-doped bismuth samples have been investigated, with hole concentrations at 4.2 K corresponding to three particular positions of the Fermi level with respect to the L-point band structure:in the conduction band, in the middle of the energy gap and in the hole band. The Hall effect and the transverse magnetoresistance are reported for fields up to 6 T and from 4.2 to 300 K.


Hall Effect Hole Concentration Dope Sample Hole Band Hall Probe 
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  1. 1.
    J. Boxus, J. Heremans, J.P. Michenaud and J.P. Issi, J. Phys. F: Metal Phys. 9, 2387 (1979).ADSCrossRefGoogle Scholar

Copyright information

© Springer Science+Business Media New York 1981

Authors and Affiliations

  • O. P. Hansen
    • 1
  • J. Heremans
    • 2
  1. 1.Universitetets Fysiske Laboratorium I H.C. Ørsted InstitutetCopenhagen ØDenmark
  2. 2.Laboratoire PCES, Place Croix du SudUniversité Catholique de LouvainLouvain-la-NeuveBelgium

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