Temperature Dependence of p-Type Doping in Bismuth
Four tin-doped bismuth samples have been investigated, with hole concentrations at 4.2 K corresponding to three particular positions of the Fermi level with respect to the L-point band structure:in the conduction band, in the middle of the energy gap and in the hole band. The Hall effect and the transverse magnetoresistance are reported for fields up to 6 T and from 4.2 to 300 K.
KeywordsHall Effect Hole Concentration Dope Sample Hole Band Hall Probe
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