Advertisement

High Frequency Response and Conduction Mechanism in Thick-Film (Cermet) Resistors

  • M. Prudenziati
  • B. Morten
  • C. Martini
  • G. Bisio

Abstract

The high frequency response of thick-film (cermet) resistors (TFRs) has been investigated in the range 108-1.8 1010 Hz. The measurements allow us to establish an electrical equivalent circuit for TFRs, whose parameters are directly related to the microstructure of the films. In particular a high effective dielectric constant is obtained which gives information on the mean grain distance in the glassy matrix; the contribution due to grains and barriers to the material resistance is directly evaluated. The barrier resistance Rb has an a.c. component which appears to drop rapidly with frequency, a crude approximation being Rb(ω) ~ 1/ω.

Keywords

Glassy Matrix Electrical Equivalent Circuit High Frequency Response Barrier Resistance Organic Vehicle 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

Preview

Unable to display preview. Download preview PDF.

Unable to display preview. Download preview PDF.

References

  1. 1.
    C.A. Harper Ed. Handbook of thic kfilm hybrid microelectronics Mc Graw Hill, N.Y. (1974).Google Scholar
  2. 2.
    T.V. Nordstrom, C.R. Hills, Proceed. 1979 Intern.Microelec. Symposium, Los Angeles, 1979, pp.40–45.Google Scholar
  3. 3.
    R.W. West Conduction mechanism in thick-film microcircuits Final Technical Report, Purdue University, 1975.Google Scholar
  4. 4.
    G.E. Pike, C.H. Seager, J. Appl. Phys. 48, 5152 (1977).ADSCrossRefGoogle Scholar
  5. 5.
    F. Forlani, M. Prudenziati, Electro Comp. Sci. Technol. 3, 77 (1976).CrossRefGoogle Scholar
  6. 6.
    M. Prudenziati, Alta Frequenza 46, 287 (1977).Google Scholar
  7. 7.
    R.M. Hill, Proceed. 2nd European Hybrid Microel. Conf. Ghent, Belgium (1979), p.95.Google Scholar
  8. 8.
    C. Canali, B. Morten, D. Malavasi, M. Prudenziati, A. Taroni, J. Appl. Phys. June 1980, in press.Google Scholar
  9. 9.
    B.W. Lieznerski, Thin Solid Films 55, 361 (1978).ADSCrossRefGoogle Scholar
  10. 10.
    J. Volger, in Progress in Semiconductors, A.F. Gibson, Wiley, N.Y. 1960, Vol.4, p.207.Google Scholar
  11. 11.
    B.M. Cohen, D.R. Ahlman, R.R. Shaw, J. Non Cryst. Solids, 12, 177 (1973).ADSCrossRefGoogle Scholar
  12. 12.
    F. Argall, A.K. Jonscher, Thin Solid Films, 2, 185 (1968).ADSCrossRefGoogle Scholar
  13. 13.
    A.K. Jonscher, J. Non Cryst. Solids, 8–10, 293, 1972.Google Scholar

Copyright information

© Plenum Press, New York 1981

Authors and Affiliations

  • M. Prudenziati
    • 1
  • B. Morten
    • 1
  • C. Martini
    • 2
  • G. Bisio
    • 2
  1. 1.Instituto di Fisica della UniversitàModenaItaly
  2. 2.Laboratorio per i Circuiti ElettroniciC.N.R.GenovaItaly

Personalised recommendations