n-Type Conduction in Chalcogenide Glasses of the Ge-Se-Bi System
Measurements of dc electrical conductivity, thermopower and Hall effect are carried out as a function of temperature on glasses of the (GeSe3.5)100-xBix system. Within the composition limits studied (x = 8 to 14), the Bi doped GeSe3.5 glasses show n-type conduction as evidenced by the thermopower measurements. The sign of the Hall coefficient is also negative. The Hall mobility is found to be very low (~ 10-2 cm2V-1s-1 at 370 K) and slightly decreases with increasing temperature. The thermopower exhibits a higher activation energy than the conductivity. The results are discussed on the basis of the Mott and Davis model for the band structure of amorphous semiconductors.
KeywordsHall Mobility High Activation Energy Chalcogenide Glass Hall Coefficient Amorphous Semiconductor
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- 5.N.F. Mott and E.A. Davis, Electronic Processes in non rystalline Materials (Clarendon Press Oxford, 1979), p.209.Google Scholar