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The Electronic Structure of Silicon Nitride

  • J. Robertson

Abstract

Silicon Nitride is found to have a valence band maximum of nitrogen lone pair p electrons because of the planar nitrogen site. This contrasts with the usual lone pair semiconductors, such as SiO2, caused by a p4 valence configuration. Consequently although the valence band density of electron states shows a lone pair band and a deeper bonding band as usual, impurities have a greater effect in the nitride than in conventional lone pair semiconductors. Hole transport is also discussed.

Keywords

Silicon Nitride Lone Pair Valence Band Maximum Nitrogen Lone Pair High Impurity Content 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Plenum Press, New York 1981

Authors and Affiliations

  • J. Robertson
    • 1
  1. 1.Central Electricity Research LaboratoriesLeatherhead, SurreyUK

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