The Electronic Structure of Silicon Nitride

  • J. Robertson


Silicon Nitride is found to have a valence band maximum of nitrogen lone pair p electrons because of the planar nitrogen site. This contrasts with the usual lone pair semiconductors, such as SiO2, caused by a p4 valence configuration. Consequently although the valence band density of electron states shows a lone pair band and a deeper bonding band as usual, impurities have a greater effect in the nitride than in conventional lone pair semiconductors. Hole transport is also discussed.


Silicon Nitride Lone Pair Valence Band Maximum Nitrogen Lone Pair High Impurity Content 
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  1. 1.
    J.J. Chang, Trans.IEEE ED-24, 511 (1977).CrossRefGoogle Scholar
  2. 2.
    P.C. Arnett, Z.A. Weinberg, Trans. IEEE ED-25, 1014 (1978).ADSCrossRefGoogle Scholar
  3. 3.
    Z.A. Weinberg, R.A. Pollak, Appl. Phys. Letts. 27, 254 (1975).ADSCrossRefGoogle Scholar
  4. 4.
    R.W.G. Wyckoff, Crystal Structures, Vol.2, p.159, Wiley, N.Y., (1964).Google Scholar
  5. R. Marchand, Y. Laurent, J. Lang, Act. Cryst. B25, 2157 (1969).Google Scholar
  6. 5.
    S.T. Pantelides, W.A. Harrison, Phys.Rev. B 13, 2667 (1976).ADSCrossRefGoogle Scholar
  7. 6.
    J. Robertson, J. Phys. C 12, 4753 (1979).ADSCrossRefGoogle Scholar
  8. 7.
    R.B. Laughlin, J.D. Joannopoulos, D.J. Chadi, Phys.Rev. B 20, 5228 (1979).ADSCrossRefGoogle Scholar
  9. 8.
    F.R. McFeely, S.P. Kowalcyzk, L. Ley, R.G. Cavell, R.A. Pollak, D.A. Shirley, Phys. Rev. B 9, 5268 (1974).ADSCrossRefGoogle Scholar
  10. 9.
    H.R. Philipp, J. Electrochem. Soc. JL 20, 296 (1973).Google Scholar
  11. 10.
    D.J. DiMaria, P.C. Arnett, Appl. Phys. Letts. 26, 711 (1975).ADSCrossRefGoogle Scholar
  12. 11.
    M.V. Coleman, D.J.D. Thomas, Phys.Stat.Solidi. 25, 241 (1968).ADSCrossRefGoogle Scholar
  13. 11.a
    J. Stohr, L. Johansson, I. Lindau, P. Pianetta, Phys.Rev. B 20, 644 (1979).ADSCrossRefGoogle Scholar
  14. 11.b
    F. Galeener concludes that the nitrogen site in a-Si3N4 is planar from scattering experiments; quoted by G. Lucovsky, J. Non Cryst. Solids 35, 825 (1980).ADSCrossRefGoogle Scholar
  15. 12.
    H.J. Stein, J. Electronic Mats., 5, 161 (1976).ADSCrossRefGoogle Scholar
  16. H.J. Stein, S.T. Picraux, P.H. Holloway, Trans. IEEE ED-25, 1008 (1978).CrossRefGoogle Scholar
  17. 13.
    J. Robertson, Phil. Mag., to be published. This paper also discusses the defect model of C.T. Kirk, J. Appl. Phys. 50, 4190 (1979).ADSCrossRefGoogle Scholar
  18. 14.
    R.C. Hughes, Phys. Rev. Letts. 30, 1333 (1973).ADSCrossRefGoogle Scholar
  19. 15.
    N.F. Mott, Adv. Phys. 26, 363 (1977).ADSCrossRefGoogle Scholar
  20. 16.
    M. Kastner, Phys. Rev. Letts. 28, 355 (1972).ADSCrossRefGoogle Scholar
  21. 17.
    N.F. Mott, E.A. Davis, R.A. Sreet, Phil.Mag. 32, 961 (1975).ADSCrossRefGoogle Scholar
  22. 18.
    G. Lucovsky, Phil.Mag. B 39, 531 (1979).CrossRefGoogle Scholar

Copyright information

© Plenum Press, New York 1981

Authors and Affiliations

  • J. Robertson
    • 1
  1. 1.Central Electricity Research LaboratoriesLeatherhead, SurreyUK

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