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Recent Developments in Condensed Matter Physics pp 231–238Cite as

Dopant Configurations in a-Se and a-Si

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Abstract

Impurity configurations in a-Se and a-Si are discussed in terms of the ionicity of the impurity-host bond and their quantal coordinates defined in terms of the Pauli-force model pseudopotentials. Self -compensation and auto-compensation in a-Si is also discussed.

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Author information

Authors and Affiliations

  1. Central Electricity Research Laboratories, Leatherhead, Surrey, KT22 7SE, UK

    J. Robertson

Authors
  1. J. Robertson
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Editor information

Editors and Affiliations

  1. University of Antwerpen (RUCA and UIA), Belgium

    J. T. Devreese (Chairman of the Conference, Professor of Theoretical Physics) (Chairman of the Conference, Professor of Theoretical Physics)

  2. University of Antwerpen (RUCA), Belgium

    L. F. Lemmens  & V. E. Van Doren  & 

  3. University of Antwerpen (UIA), Belgium

    J. Van Royen

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© 1981 Plenum Press, New York

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Robertson, J. (1981). Dopant Configurations in a-Se and a-Si. In: Devreese, J.T., Lemmens, L.F., Van Doren, V.E., Van Royen, J. (eds) Recent Developments in Condensed Matter Physics. Springer, Boston, MA. https://doi.org/10.1007/978-1-4684-3899-4_30

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  • DOI: https://doi.org/10.1007/978-1-4684-3899-4_30

  • Publisher Name: Springer, Boston, MA

  • Print ISBN: 978-1-4684-3901-4

  • Online ISBN: 978-1-4684-3899-4

  • eBook Packages: Springer Book Archive

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