Time-of-Flight Techniques

  • Lino Reggiani
Part of the NATO Advanced Study Institutes Series book series (NSSB, volume 52)


The basic ideas concerning time-of-flight techniques (ToF) as applied to the study of transport phenomena in semiconductors were first presented by Haynes and Shockley (1951) in their pioneer experi ments. The most important quantity which results as output of the measurement is the value of the transit time TR, that is the time taken by the charge carriers to travel across a given region of the sample under the influence of a known electric field. Thus, the ToF technique is usually synonymous with transit-time measurements.


Transit Time Drift Velocity Current Signal Current Waveform Majority Carrier 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.


Unable to display preview. Download preview PDF.

Unable to display preview. Download preview PDF.


  1. Alberigi-Quaranta, A., Cipolla, F., and Martini, M., 1965, Phys. Letters 17:102.ADSCrossRefGoogle Scholar
  2. Alberigi-Quaranta, A., Martini, M., and Ottaviani, G., 1969, IEEE Trans. Nucl. Sci. NS-16:35.Google Scholar
  3. Alberigi-Quaranta, A., Canali, C., and Ottaviani, G., 1970a, Rev. Sci. Instr. 41:1205.ADSCrossRefGoogle Scholar
  4. Alberigi-Quaranta, A., Canali, C., Ottaviani, G., and Zauio, K. R., 1970b, Lett. Nuovo Cimento 4:908.CrossRefGoogle Scholar
  5. Alberigi-Quaranta, A., Jacoboni, C., and Ottaviani, G., 1971, Rivista del Nuovo Cimento 1:445.ADSCrossRefGoogle Scholar
  6. Bartelink, D. J., and Persky, G., 1970, Appl. Phys. Lett. 16:191.ADSCrossRefGoogle Scholar
  7. Canali, C, Martini, M., Ottaviani, G., Alberigi-Quaranta, A., and Zanio, K. R., 1971, Nucl. Instr. Meth. 96:561.CrossRefGoogle Scholar
  8. Canali, C, Martini, M., Ottaviani, G., and Alberigi-Quaranta, A.,1972, IEEE Trans. Nucl. Sci. NS-19:9.Google Scholar
  9. Canali, C, Jacoboni, C., Nava, F., Ottaviani, G., and Alberigi-Quaranta, A., 1975, Phys. Rev. 12B:2265.Google Scholar
  10. Conwell, E. M., 1967, High Field Transport in Semiconductors,11 Academic Press, New York.Google Scholar
  11. Gunn, J. B., and Elliott, B. J., 1966, Phys. Letters 22:369.ADSCrossRefGoogle Scholar
  12. Haynes, J. R., and Shockley, W., 1951, Phys. Rev. 81:835.ADSCrossRefGoogle Scholar
  13. Jacoboni, C., 1974, in Proc. 13th Intern. Conf. Phys. Semicond., Rome Ed. by F. Fumi, Marves, Rome, p. 1195.Google Scholar
  14. Kepler, R. G., 1960, Phys. Rev. 119:1226.ADSCrossRefGoogle Scholar
  15. Martini, M., and McMath, T. A., 1969, Appl. Phys. Letters 14:374.ADSCrossRefGoogle Scholar
  16. Nava, F., Canali, C., and Jacoboni, C, 1978, Sol.-State Electr. 21:689.Google Scholar
  17. Nava, F., Canali, C., Reggiani, L., Gasquet, D., Vaissiere, J. C, and Nougier, J. P., 1979, J. Appl. Phys., in press.Google Scholar
  18. Nougier, J. P., 1978, in Noise in Physical Systems Ed. by D. Wolf, Springer-Verlag, Berlin.Google Scholar
  19. Ottaviani, G., Canali, C., Jacoboni, C., and Alberigi-Quaranta, A.,Google Scholar
  20. 1973, J. Appl. Phys. 44:360.Google Scholar
  21. Persky, G., and Bartelink, D. J., 1971, J. Appl. Phys. 42:4414.ADSCrossRefGoogle Scholar
  22. Reggiani, L., Canali, C., Nava, F., and Alberigi-Quaranta, A., 1978, J. Appl. Phys. 49:4446.ADSCrossRefGoogle Scholar
  23. Ruch, J. G., and Kino, G. S., 1968, J. Appl. Phys. 174:921.Google Scholar
  24. Sigmon, T. W., and Gibbons, J. F., 1969, Appl. Phys. Letters 10:320.ADSCrossRefGoogle Scholar
  25. Smith, R. A., 1959, Semiconductors Cambridge Univ. Press, London.MATHGoogle Scholar
  26. Spear, W. E., 1957, Proc. Phys. Soc. 70:669.CrossRefGoogle Scholar
  27. Taroni, A., and Zanarini, 1969a, Nucl. Instr. Meth. 67:277.CrossRefGoogle Scholar
  28. Taroni, A., and Zanarini, 1969b, J. Phys. Chem. Solids 30:1861.ADSCrossRefGoogle Scholar

Copyright information

© Plenum Press, New York 1980

Authors and Affiliations

  • Lino Reggiani
    • 1
  1. 1.Gruppo Nazionale di Struttura della Materia Istituto di FisicaUniversità di ModenaModenaItaly

Personalised recommendations