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Hot Electron Contributions in Two and Three Terminal Semiconductor Devices

  • H. L. Grubin
Part of the NATO Advanced Study Institutes Series book series (NSSB, volume 52)

Abstract

In the previous discussion (Grubin, 1977) we concentrated on transient hot electron effects in semiconductor devices. We noted that these effects may be dominant for spatial dimensions of the order of the carrier mean free path and for doping levels common to currently fabricated field effect transistors. Perhaps one of the most significant consequences of these relaxation effects is that they will ultimately serve to elimate the presence of negative differential mobility from such semiconductors as gallium arsenide and indium phosphide. Thus, there are at least two questions that we must consider: (1) Under what conditions will a semiconductor device possess a region of negative differential mobility, and (2) if it does possess this region, what are its consequences? We will examine these questions in reverse order.

Keywords

Gallium Arsenide Neutral Curve Indium Phosphide Terminal Device Distance Profile 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Plenum Press, New York 1980

Authors and Affiliations

  • H. L. Grubin
    • 1
  1. 1.United Technologies Research CenterEast HartfordUSA

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