High-Field Transport of Holes in Elemental Semiconductors

  • Lino Reggiani
Part of the NATO Advanced Study Institutes Series book series (NSSB, volume 52)


This paper reports a brief review on recent results of hot-hole transport in the elemental semiconductors diamond, silicon and germanium. The macroscopic quantities of interest are the drift velocity vd and the longitudinal diffusion coefficient D, and in the present study we shall be concerned with their dependence upon electric field strength, crystallographic directions and temperature. Comparison between theory and experiments enables the values of the deformation potential parameters, which describe the hole-lattice scattering, to be evaluated. Furthermore, correlations between peculiarities of the valence band structure, such as warping and nonparabolicity, and macroscopic quantities are analyzed in detail.


Drift Velocity Macroscopic Quantity Elemental Semiconductor Valence Band Structure Saturated Drift Velocity 
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Copyright information

© Plenum Press, New York 1980

Authors and Affiliations

  • Lino Reggiani
    • 1
  1. 1.Gruppo Nazionale di Struttura della Materia Istituto di FisicaUniversità di ModenaModenaItaly

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