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Noise and Diffusion of Hot Carriers

  • J. P. Nougier
Part of the NATO Advanced Study Institutes Series book series (NSSB, volume 52)

Abstract

Every electrical system biased by a dc voltage or a dc current exhibits fluctuations of the voltage and/or of the current at its terminals. These fluctuations are called the noise. The bias point is determined as the intersection of the characteristics of the system under consideration and of the output circuit. Therefore, the noise depends partly on the inner properties of the system. In the same way, the noise of the system is also governed by its inner properties.

Keywords

Noise Source Shot Noise Noise Temperature Noise Voltage Bias Point 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Bibliography

  1. Alberigi-Quaranta, A., Borsari, V., Jacoboni, C., and Zanarani, G., 1973, Appl. Phys. Letters 22:103.ADSCrossRefGoogle Scholar
  2. Alberigi-Quaranta, A., Jacoboni, C., and Ottaviani, G., 1971, Rev. Nouvo Cim. 1:445.CrossRefGoogle Scholar
  3. Bareikis, V., Pozhela, Yu. K., and Matulenene, I. B., 1968, in Proc. Intern. Conf. Phys. Semiconductors, Moscow p. 760.Google Scholar
  4. Bartelink, D. J., and Persky, G., 1970, Appl. Phys. Letters 16:191.ADSCrossRefGoogle Scholar
  5. Callen, H. B., and Welton, T. A., 1951, Phys. Rev. 83:34.MathSciNetADSMATHCrossRefGoogle Scholar
  6. Canali, C., Jacoboni, C., Nava, F., Ottaviani, G., and Alberigi-Quaranta, A., 1975a, Phys. Rev. B 12:2265.ADSCrossRefGoogle Scholar
  7. Canali, C., Catellani, F., Jacoboni, C., Minder, R., Ottaviani, G., and Alberigi-Quaranta, A., 1975b, Sol. State Commun. 17:1443.ADSCrossRefGoogle Scholar
  8. Canali, C., Jacoboni, C, Ottaviani, G., and Alberigi-Quaranta, A., 1975a, Appl. Phys. Letters 27:278.ADSCrossRefGoogle Scholar
  9. Canali, C., Gavioli, G., Nava, F., Ottaviani, G., and Reggiani, L., 1976, in Proc. Intern. Conf. Phys. Semiconductors, Rome p. 1231.Google Scholar
  10. Canali, C., Nava, F., Reggiani, L., Gasquet, D., Vaissiere, J. C., and Nougier, J. P., 1979, J. Appl. Phys. 50:922.ADSCrossRefGoogle Scholar
  11. Einstein, A., 1905, Ann. Phys. 17:549.MATHCrossRefGoogle Scholar
  12. Einstein, A., 1906, Ann. Phys. 19:289,371.MATHCrossRefGoogle Scholar
  13. Erlbach, E., 1963, Phys. Rev. 132:1976.ADSCrossRefGoogle Scholar
  14. Erlbach, E., and Gunn, J. B., 1962a, Proc. Intern. Conf. Phys. Semiconductors, Exeter p. 128.Google Scholar
  15. Erlbach, E., and Gunn, J. B., 1962b, Phys. Rev. Letters 8:280.ADSCrossRefGoogle Scholar
  16. Fawcett, W., 1973, in Electrons in Crystalline Solids IAEA, Vienna.Google Scholar
  17. Hart, L. G., 1970, Canad. J. Phys. 48:531. Hill, G., Robson, P. N., and Fawcett, W., 1979, J. Appl. Phys. 50:356.Google Scholar
  18. Kaszynski, A., 1979, Thèse de Docteur Ingenieur, Lille (France).Google Scholar
  19. Kintchine, A. I., 1934, Math. Ann. 109:604.MathSciNetCrossRefGoogle Scholar
  20. Kubo, R., 1957, J. Phys. Soc. Jpn. 12:570. Langevin, M. P., 1908, Comp. Rend. Acad. Sci., Paris 146:530.Google Scholar
  21. Nash, J. G., and Holm-Kennedy, J. W., 1974, Appl. Phys. Letters 24:139.ADSCrossRefGoogle Scholar
  22. Nash, J. G., and Holm-Kennedy, J. W., 1977, Phys. Rev. B 16:2834.ADSCrossRefGoogle Scholar
  23. Nougier, J. P., 1972, Thesis, unpublished.Google Scholar
  24. Nougier, J. P., 1973a, Phys. State Sol. (b) 55:K43.ADSCrossRefGoogle Scholar
  25. Nougier, J. P., 1973b, Physica 64:209.ADSCrossRefGoogle Scholar
  26. Nougier, J. P., 1978, Appl. Phys. Letters 37:671.ADSCrossRefGoogle Scholar
  27. Nougier, J. P., and Rolland, M., 1973, Phys. Rev. 138:5728.Google Scholar
  28. Nougier, J. P., and Rolland, M., 1976, in Proc. 13 Intern. Conf. Phys. Semiconductors, Rome p. 1227.Google Scholar
  29. Nougier, J. P., and Rolland, M., 1977, J. Appl. Phys. 48:1683.ADSCrossRefGoogle Scholar
  30. Nougier, J. P., Comallonga, J., and Rolland, M., 1974, J. Phys. E 7:287.ADSCrossRefGoogle Scholar
  31. Nougier, J. P., Gasquet, D., and Vaissiere, J. C., 1978a, Rev. Phys. Appl. 13:715. Nougier, J. P., Gasquet, D., Vaissiere, J. C., and Bilger, H. R., 1978b, in Proc. 5th Intern. Conf. on Noise in Phys. Systems Springer-Verlag, p. 110.CrossRefGoogle Scholar
  32. Nougier, J. P., Gasquet, D., 1978, Appl. Phys. Letters 33:89.ADSCrossRefGoogle Scholar
  33. Nougier, J. P., Sodini, D., Rolland, M., Gasquet, D., and Lecoy, G., 1978c, Sol.-State Electr. 21:133.ADSCrossRefGoogle Scholar
  34. Nyquist, H., 1928, Phys. Rev. 32:110. Persky, G., and Bartelink, D. J., 1971, J. Appl. Phys. 42:4414.Google Scholar
  35. Price, P. J., 1958, IBM J. Res. Develop. 3:191.CrossRefGoogle Scholar
  36. Price, P. J., 1965, in Fluctuation Phenomena in Solids Ed. by Burgess, R. E., Academic Press, New York.Google Scholar
  37. Pozhela, Yu. K., Bareikis, V. A., and Matulenene, I. B., 1968, Sov. Phys.-Semicond. 2:503.Google Scholar
  38. Reggiani, L., Canali, C., Nava, F., and Gagliani, G., 1979, unpublished.Google Scholar
  39. Rigaud, A., Nicolet, M. A., and Savelli, M., 1973, Phys. Stat. Sol.(a) 18:531.ADSCrossRefGoogle Scholar
  40. Robinson, F. N. H., 1974, Noise and Fluctuations in Electronic Devices and Circuits Clarendon Press, Oxford.Google Scholar
  41. Rolland, M., 1975, Thesis, unpublished.Google Scholar
  42. Ruch, J. G., and Kino, G. S., 1968, Phys. Rev. 174:921.ADSCrossRefGoogle Scholar
  43. Shockley, W., Copeland, J. A., and James, R. P., 1966, in Quantum Theory of Atoms, Molecules, and the Solid State P. Löwdin, Ed., Academic Press, New York.Google Scholar
  44. Sigmon, T. W., and Gibbons, J. F., 1969, Appl. Phys. Letters 15:320.ADSCrossRefGoogle Scholar
  45. Sodini, D., 1979, Thesis, unpublished.Google Scholar
  46. Stephen, S., 1969, Phys. Rev. 182:531.ADSCrossRefGoogle Scholar
  47. Van der Ziel, A., 1970, Noise: Sources, Characterization, Measure ment Prentice-Hall, Englewood Cliffs, New Jersey.Google Scholar
  48. Van der Ziel, A., 1976, Proc. 4th Intern. Conf. Physical Aspects of Noise in Sol.-State Devices Physica 83B:41.Google Scholar
  49. Van der Ziel, A., Jindal, R., Kim, S. K., Park, H., and Nougier, J. P., 1979, Sol.-State Electr. 22:177.CrossRefGoogle Scholar
  50. Van Kampen, N. G., 1965, in Fluctuation Phenomena in Solids Ed. by Burgess, R. E., Academic Press, New York.Google Scholar
  51. Van Vliet, K. M., 1971, J. Math. Phys. 12:1981.ADSMATHCrossRefGoogle Scholar
  52. Van Vliet, K. M., 1976, in Proc. 4th Intern. Conf. on Physical Aspects of Noise in Sol.-State Devices Physica 83B:52.Google Scholar
  53. Van Vliet, K. M., and Van der Ziel, A., 1977, Sol.-State Electr. 20:231.Google Scholar
  54. Van Vliet, K. M., Friedman, A., Zijlstra, R. J. J., Gisolf, A., and Van der Ziel, A., 1975a, J. Appl. Phys. 46:1804.ADSCrossRefGoogle Scholar
  55. Van Vliet, K. M., Friedman, A., Zijlstra, R. J. J., Gisolf, A., and Van der Ziel, A., 1975b, J. Appl. Phys. 46:1814.ADSCrossRefGoogle Scholar
  56. Wiener, N., 1930, Acta Math. Stockholm 55:117.MathSciNetMATHGoogle Scholar
  57. Zijlstra, R. J. J., 1978, in Proc. 5th Intern. Conf. on Noise in Physical Systems Springer-Verlag, Springer Series in Electro-Physics 2, p. 90.Google Scholar

Copyright information

© Plenum Press, New York 1980

Authors and Affiliations

  • J. P. Nougier
    • 1
  1. 1.Centre d’Etudes d’Electronique des SolidesUniversité des Sciences et Techniques du LanguedocMontpellierFrance

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