Hot Electron Effects in Semiconductor Devices

  • H. L. Grubin
Part of the NATO Advanced Study Institutes Series book series (NSSB, volume 52)


The original impetus for much of the hot electron work that has taken place in the last decade was the need to understand the contributions of hot electrons to semiconductor devices. The turning point in this area of study occurred when Gunn (1964a) published his results showing the presence of spontaneous and coherent oscillations in gallium arsenide and indium phosphide two terminal devices. Today, of course, hot electron phenomena are being studied for their own interest, and with ends that are ostensibly independent of device considerations. But, in fact, the two areas cannot be separated. Rather the emphasis is different, with hot-electron-device studies concentrating on situations where the electric field sustains large and fast transients and where the field is highly nonuniform.


Drift Velocity Gallium Arsenide Accumulation Layer Central Valley Momentum Balance Equation 
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Copyright information

© Plenum Press, New York 1980

Authors and Affiliations

  • H. L. Grubin
    • 1
  1. 1.United Technologies Research CenterEast HartfordUSA

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