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Surface Contamination Removal from Solid State Devices by Dry Chemical Processing

  • H. B. Bonham
  • P. V. Plunkett

Abstract

Many authors have discussed the detrimental results of surface contamination upon thermocompression bondability. The problem is acute when gold-aluminum intraconnections are formed, since most wet chemical cleaning procedures degrade bondability further because of residual contamination. This paper discusses the dry chemical approach of plasma cleaning to remove organic contamination from aluminum surfaces.

Keywords

Bond Yield Organic Contamination Resistor Stability Cleaning Time Plasma Cleaning 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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References

  1. 1.
    J. L. Jellison, “Proc. of the Electronic Components Conference,” p. 271, IEEE, 1975.Google Scholar
  2. 2.
    LFE Data Sheet, Bulletin No. 8203-PBI, LFE Corporation, Process control Division, Waltham, MA, February 1974.Google Scholar
  3. 3.
    D. S. Peck, “Proc. 12th Reliability Physics Symposium,” p. 253, IEEE, 1975.CrossRefGoogle Scholar
  4. 4.
    P. A. Holloway, “Quantitative Analysis of the Influence of Contaminants on Thermocompression Bonding of Gold, “ SAND73–1099, Sandia Laboratories, Albuquerque, NM, March 1974.Google Scholar
  5. 5.
    D. F. O’Kane and K. L. Mittal, J. Vac. Sci. and Tech., 567, 1974.Google Scholar

Copyright information

© Plenum Press, New York 1979

Authors and Affiliations

  • H. B. Bonham
    • 1
    • 2
  • P. V. Plunkett
    • 1
  1. 1.Sandia LaboratoriesAlbuquerqueUSA
  2. 2.Electronic Systems GroupRockwell InternationalDallasUSA

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