Evolution of Microstructure in Polycrystalline Silicon Carbide

  • S. Shinozaki
  • K. R. Kinsman
Part of the Materials Science Research book series (MSR, volume 11)


This paper describes the results of an organized study of the structural aspects of the development of microstructure in polycrystalline silicon carbide. While silicon carbide has long seen specialized application in the polycirystalline form, it is only recently that technological advances have permitted the high resolution observation of structure by transmission electron microscopy. Most of our current understanding of the subject is built upon X-ray diffraction analyses of single crystals prepared by precipitation,from solvents or by growth in the vapor phase. The consolidation processes involved in the preparation of polycrystalline material incorporate these and other phenomena. Much of the single crystal information already in hand provides a basis for the understanding of polycrystalline structure, particularly that relating to the fine structure within grains (crystals). However, the polycrystalline microstructure depends not only upon the initial fine structure but also upon the changes that take place as a result of intercrystalline interaction and processing variables in addition to time and temperature.


Silicon Carbide Seed Crystal Close Packed Plane Isothermal Reaction Shockley Partial Dislocation 
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Copyright information

© Plenum Press, New York 1978

Authors and Affiliations

  • S. Shinozaki
    • 1
  • K. R. Kinsman
    • 2
  1. 1.Research StaffFord Motor CompanyDearbornUSA
  2. 2.Electric Power Research InstitutePalo AltoUSA

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