Pressure-Induced Covalent-Metallic Transitions

  • S. Minomura


This review will be concerned with those aspects of the covalent-metallic transitions in crystalline and amorphous semiconductors under pressure that provide information on lattice and electron instabilities. The emphasis will be on the difference of transition processes between crystalline and amorphous semiconductors. The new characteristics of structures and electron states for the high-pressure modifications of Si, Ge, III-V compounds, Se, Te and chalcogenides will be reported. The lattice instabilities will be evidenced by the softening of Raman active modes with pressure. The current status of theoretical attempts to describe the covalent-metallic transitions under pressure will be presented.


Amorphous Semiconductor Raman Active Mode Critical Magnetic Field Diffuse Halo Crystalline Semiconductor 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.


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Copyright information

© Plenum Press, New York 1978

Authors and Affiliations

  • S. Minomura
    • 1
  1. 1.Institute for Solid State PhysicsUniversity of TokyoTokyoJapan

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