Sintering of Silicon Carbide

  • Svante Prochazka
Part of the Materials Science Research book series (MSR, volume 9)


The absence of densification during sintering of pure SiC is the result of its high grain boundary to surface energy ratio. Whenever this ratio exceeds a certain critical value, a solid will fail to densify without external pressure as there is not enough energy available to extend the grain boundaries.


Silicon Carbide Boron Carbide Proper Carbon Aluminum Nitride Tabular Crystal 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.


Unable to display preview. Download preview PDF.

Unable to display preview. Download preview PDF.


  1. 1.
    P. Popper and D.G.S. Davies, The Preparation and Properties of Self-bonded Silicon Carbide, Powder Met.8, 1961.Google Scholar
  2. 2.
    G.R. Terwilliger, Properties of Sintered Si3N4, J. Am. Cer. Soc.57, 48, 1961.CrossRefGoogle Scholar
  3. 3.
    K. Komeya, private communications.Google Scholar
  4. 4.
    W.R. Billington, J. Chown and A.E.S. White, The Sintering of Silicon Carbide, in Special Ceramics, P. Popper, ed., Vol. 2, 1962.Google Scholar
  5. 5.
    S. Prochazka, unpublished work, G.E. CR&D, Schenectady, N.Y.Google Scholar
  6. 6.
    K. Komeya, and H. Inoue, Sintering of Aluminum Nitride, J. Matl. Sci.4, 1045, 1969.CrossRefGoogle Scholar
  7. 7.
    M. Trontelj, and D. Kolar, Pressure-less Sintering of Aluminum Nitride to High Density, J. Matl. Sci.8, 136, 1973.CrossRefGoogle Scholar
  8. 8.
    S. Prochazka, Sintering of Silicon Carbide, Proceedings of the Conference on Ceramics for High Performance Application, Hyannis, Mass., 1973, G.E. Rpt. No. 74CRD067.Google Scholar
  9. 9.
    S. Prochazka, Investigation of Ceramics for High Temperature Turbine Vanes, G.E. Rpt. No. SRD-74–04, December 1973.Google Scholar
  10. 10.
    P.D. St. Piere and M.J. Curran, A Simple Laboratory Furnace for Use up to 2500°C, G.E. Rot. No. CRD-012, December 1972.Google Scholar
  11. 11.
    P.T.B. Shaffer, The Phases in the System SiC-B4C-C, Mat. Res. Bull.4, 213, 1969.CrossRefGoogle Scholar
  12. 12.
    Y.A. Vodakohov and K.N. Mokhov, Diffusion and Solubility of Impurities in SiC, Proceedings of the Third International Conference on Silicon Carbide, Miami, Florida, September 1973.Google Scholar
  13. 13.
    S. Prochazka, Abnormal Grain Growth in Polycrystalline SiC, International Conference on SiC, Miami, Florida, 1973, to be published.Google Scholar
  14. 14.
    J. Nadeau, Very High Pressure Bot-Pressing of SiC, Bull. Am. Cer. Soc.52, 170, 1973.Google Scholar
  15. 15.
    C.S. Smith, Grains, Phases and Interfaces, Trans. AIME175, 15, 1948.Google Scholar
  16. 16.
    R.L. Coble, Diffusion Sintering in the Solid State, in Kinetics of High-Temperature Processes, W.D. Kingery, ed., J. Wiley, 1959.Google Scholar
  17. 17.
    W.D. Kingery and B. Francois, The Sintering of Crystalline Oxides I, in Sintering and Related Phenomena, G.C. Kuczynski, ed.Google Scholar
  18. 18.
    C.E. Hoge and J.A. Pask, Thermodynamics of Solid State Sintering, Third International Meeting on Sintering, Herceg Novy, September 1973, to be published.Google Scholar
  19. 19.
    I.M. Stephenson and J. White, Factors Controlling Micro-structure in Two Phase and Three Phase Systems, Trans. Brit. Cer. Soc.66, 9, 1967.Google Scholar
  20. 20.
    R.H. Bruce, Aspects of the Surface Energy of Ceramics, Science of Ceramics, Vol. 2, p. 359, 1965, G.H. Stewart, ed.Google Scholar

Copyright information

© Plenum Press, New York 1975

Authors and Affiliations

  • Svante Prochazka
    • 1
  1. 1.General Electric CompanyCorporate Research & Dev.SchenectadyUSA

Personalised recommendations