The Effect of Nonstoichiometry on Creep of Oxides

  • A. H. Clauer
  • M. S. Seltzer
  • B. A. Wilcox
Part of the Materials Science Research book series (MSR, volume 5)


High temperature creep in oxides is often quite sensitive to stoichiometry, primarily because creep is often a diffusion-controlled process, and diffusion occurs by the movement of point defects. The point defect concentration depends on both the type and amount of impurities present, and on the ambient oxygen pressure. Therefore, oxide stoichiometry is particularly dependent upon the environment at high temperatures, where diffusion is rapid. The relation between the creep behavior and stoichiometry in oxides is reviewed in detail.


Slip System Creep Rate Creep Behavior Oxygen Diffusion Stress Exponent 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.


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Copyright information

© Plenum Press, New York 1971

Authors and Affiliations

  • A. H. Clauer
    • 1
  • M. S. Seltzer
    • 1
  • B. A. Wilcox
    • 1
  1. 1.Battelle Memorial InstituteColumbus LaboratoriesColumbusUSA

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