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Charge State Dependence of Si K X-Ray Production in Solid and Gaseous Targets by 40 MeV Oxygen Ion Impact

  • J. R. Mowat
  • B. R. Appleton
  • J. A. Biggerstaff
  • S. Datz
  • C. D. Moak
  • I. A. Sellin

Abstract

We have studied the yield of silicon K x rays induced by 2 1/2 MeV/amu oxygen ions in gaseous (SiH4) and amorphous solid targets. For a gas density 7.4 x 1014 cm-2 the yield increases approximately exponentially with the charge state q of the projectile in the region q = 6, 7, 8. A similar, but smaller, trend is found for a 7 μg/cm2 solid target. At this beam energy the most probable oxygen charge state emerging from a solid Si target is 07+. The x-ray yield from the solid is in accord with the emergent charge state.

Keywords

Charge State Solid Target Average Charge State Single Electron Capture Projectile Charge 
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Copyright information

© Springer Science+Business Media New York 1975

Authors and Affiliations

  • J. R. Mowat
    • 2
  • B. R. Appleton
    • 1
  • J. A. Biggerstaff
    • 1
  • S. Datz
    • 1
  • C. D. Moak
    • 1
  • I. A. Sellin
    • 2
  1. 1.Oak Ridge National LaboratoryOak RidgeUSA
  2. 2.Department of PhysicsThe University of TennesseeKnoxvilleUSA

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