An Investigation of the Processes Involved in the Production of Non-Characteristic X Rays During Ion Bombardment of Solid Targets
This work can be subdivided into two main areas. First, it examines the role played by the projectile in generating both characteristic and non-characteristic x rays during argon ion bombardment of silicon and silicon carbide. This involves an investigation of the effect of projectile build-up in these targets, and some high resolution spectral examination of the ArL x rays. It emerges that Ar → Si collisions are mainly responsible for the non-characteristic x rays; the dominant mechanism at the energy investigated is a double scattering process, although recoils also play a role in the Ar → Si system. Second, the differential cross-sections for non-characteristic x ray produced during C → C collisions have been measured over the energy range 40 → 280 keV. This work demonstrates a gradual levelling off of these cross sections and also highlights the appearance of x rays having energy greater than the united atom limit, arising from a collision broadening effect.
KeywordsSilicon Carbide Proportional Counter Projectile Energy Unite Atom Limit Projectile Energy Range
Unable to display preview. Download preview PDF.
- F. W. Saris, I. V. Mitchell, D. C. Santry, J. A. Davies, R. Laubert, Proc. International Conference on Inner Shell Ionization Phenomena, Atlanta (USAEC Conf.-720404 (4 vols.)) 1972.Google Scholar
- J. R. MacDonald, M. D. Brown, Phys. Rev. Lett. 29 (1972).Google Scholar
- M. Steadman, J. A. Cairns, A. D. Marwick (in preparation).Google Scholar
- J. A. Cairns, A. D. Marwick, I. V. Mitchell, presented at the International Conference on Ion Beam Surface Layer Analysis (IBM Research, N.Y., June 1973);Google Scholar