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Indication for an Ionization Damage Process in Light Ion Irradiation Damage in Silicon

  • H. J. Pabst
  • D. W. Palmer

Abstract

Rutherford backscattering channeling experiments analysed in the framework of single scattering theory, taking into account the effects of flux peaking, lattice location of defects (through de-channeling cross section), and number of scattering centres per defect, indicate defect introduction rates for 300 keV H+ and 275 keV He+ in the ratio 1 to 2 which is similar to the electronic stopping power ratio but differs considerably from Kinchin and Pease predictions (ratio 1 to 20). A multiple ionization damage process is proposed.

Keywords

Ionization Cross Section Auger Recombination Yield Change Close Pair Random Path 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Springer Science+Business Media New York 1975

Authors and Affiliations

  • H. J. Pabst
    • 1
  • D. W. Palmer
    • 1
  1. 1.School of Mathematical and Physical SciencesUniversity of SussexFalmer, Brighton, SussexEngland

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