The Capture of Electrons by Negatively Charged Impurity Atoms in N-Type Germanium
It is well known that the capture of an electron by an impurity atom is governed by two factors; (1) the electric charge on the impurity atom, and (2) the way in which the electron loses energy in its transition from the conduction band to a captured state. We have studied the dependence of capture rate on the external electric field at law temperature (20°K) for n-Ge containing gold centres as impurities.
KeywordsApplied Electric Field Impurity Atom Optical Phonon Capture Rate Acoustical Phonon
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- 1.E.E. Vasilios, E.B. Levinson, JETP 50, 1660 (1966).Google Scholar
- 2.E.M. Conwell, High Field Transport in Semiconductors and Solid State Physics, Suppl. 9, Academic Press, New York (1967).Google Scholar
- 3.V.L. Bonch-Bruevitch, Fiz. Tverdogo Tela, Suppl. 182 (1959).Google Scholar
- 4.R.G. Pratt, B.K. Kidley, Proc. Phys. Soc. (1963).Google Scholar
- 5.V.L. Bonch-Bruevitch9 Fiz. Tverdogo Tela 6, 2047 (1964).Google Scholar