Electrical Properties of Quenched SnO2 Films on Glass Substrates

  • E. W. Wartenberg
  • P. W. Ackermann


SnO2 films have been prepared on glass substrates of different linear coefficients of expansion α from different tin-compounds through a hydrolytic reaction by chemical vapor deposition (CVD) under simultaneous quenching. The electro conductivity of the semiconducting films were measured and found to be dependent upon the film forming compounds the film growth rate and temperature the hydrolytic reaction intrinsic and thermal stress. The thermal stress is responsible for the observed difference in conductivity on glass substrates with different α-values.


Thermal Stress Glass Substrate Hydrolytic Reaction Free Carrier Concentration Film Building 
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Copyright information

© Plenum Press, New York 1974

Authors and Affiliations

  • E. W. Wartenberg
    • 1
  • P. W. Ackermann
    • 1
  1. 1.Institut für Anorganische ChemieUniversitaet StuttgartDeutschland

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