Indirect Exciton with Degenerate Valence Band in the Two-Photon Absorption in Semiconductors
We have developed from third-order time-dependent perturbation theory the theory of indirect transitions to exciton states with two-photon absorption when the valence band is degenerate in semi-conductors. A group theoretical analysis is performed for the case of GaP (or III – V compounds) in order to determine which transition is allowed in the process, the symmetry of the excitons, and the symmetry of the phonons which contriubte in the transitions. A numerical application has been performed on GaP compound and compared with the literature. The GaP compound seems a good candidate for an indirect-type semiconductor.
KeywordsValence Band Exciton State Group Theoretical Analysis Indirect Exciton Simple Valence
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