The Silicon-Diode-Array Camera Tube
A large number of electronic cameras have been developed for converting an optical image into an electrical signal.1–3 In many of these, a light-induced charge pattern is stored on a suitable image-sensing target and a low-velocity scanning electron beam is used to access the charge pattern. One such camera tube, the vidicon, has many desirable characteristics; it has found extensive commercial use partly because of small size and inexpensive construction.2 However, the vidicon does possess characteristics which, in many applications, can prove undesirable or even detrimental.
KeywordsDark Current Modulation Transfer Function Depletion Region Resistive Film Optical Wavelength
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- 1.V. K. Zworykin and J. A. Morton, Television, John Wiley and Sons, New York, 2nd ed. (1954).Google Scholar
- 2.P. K. Weimer, J. V. Forgue, and R. R. Goodrich, “The Vidicon Photoconductive Camera Tube,” RCA Rev. 12(1), 306–313 (1951).Google Scholar
- 3.E. F. de Haan, A. van der Drift, and P. P. M. Schampers, “The ‘Plumbicon’ a New Television Camera Tube,” Philips Technical Rev. 25(6, 7), 133–155 (1963–1964).Google Scholar
- 5.P. K. Weimer, G. Sadasiy, H. Borkan, L. Meray-Horvath, Jr., and F. V. Schallcross, “A Thin-Film Solid-State Image Sensor,” 1966 Int. Solid State Circuits Conf., University of Pennsylvania, Digest of Technical Papers, pp. 122-123.Google Scholar
- 6.G. P. Weckler, “Storage-Mode Operation of Phototransistor and Its Adaption to Integrated Arrays for Image Detection,” 1966 Int. Electron Device Meeting, Washington, D. C., October 26–28, 1966, p. 34.Google Scholar
- 7.M. A. Schuster and W. F. List, “Fabrication Considerations for Monolithic Electro-optical Mosaics,” Trans. Metallurgical Soc. AIME 236(3), 375–378 (1966).Google Scholar
- 8.Papers in “Special Issue on Solid State Imaging,” IEEE Trans, on Electron Devices ED-15 (4) (1968).Google Scholar
- 9.F. W. Reynolds, “Solid State Light Sensitive Storage Device,” U. S. Patent No. 3, 011, 089, applied for April 15, 1958, issued November 21, 1961.Google Scholar
- 10.M. H. Crowell, T. M. Buck, E. F. Labuda, J. V. Dalton, and E. J. Walsh, “An Electron Beam-Accessed, Image-Sensing Silicon-Diode Array with Visible Response,” 1967 Int. Solid State Circuits Conf., Digest of Technical Papers, University of Pen-sylvania, March 1967, pp. 128-130.Google Scholar
- 17.W. Shockley, Electrons and Holes in Semiconductors, D. van Nostrand Company, New York (1950).Google Scholar
- 18.G. A. Morton and J. E. Ruedy, “The Low Light Level Performance of the Intensifier Orthicon,” in Photo-Electronic Image Devices, symposium at London, September 3–5, 1958, in Advances in Electronics and Electron Physics, Vol. XII, ed. by L. Marton, Academic Press, New York (1960), pp. 183–193.Google Scholar
- 20.J. A. M. Dikhoff, “Inhomogeneities in Doped Germanium and Silicon Crystals,” Philips Technical Rev. 22(8), 195–206, (1963–1964).Google Scholar