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Electrons and Phonons in Narrow Gap Semiconductors

  • M. Balkanski
Part of the NATO Advanced Study Institutes Series book series (volume 2)

Abstract

There are two categories of zero gap materials: one in which the lowest lying conduction band edge is degenerate with the highest lying valence band edge by reasons of symmetry and the other in which a cross over point between the conduction and valence bands exists for a given composition due to shifts of energy levels corresponding to spin-orbit and relativistic corrections.

Keywords

Valence Band Band Structure Brillouin Zone Dielectric Function Electronic Band Structure 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Plenum Press, London 1974

Authors and Affiliations

  • M. Balkanski
    • 1
  1. 1.Laboratoire de Physique des SolidesUniversité de Paris VIFrance

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