Two-Phonon Deformation Potentials, Second Order Raman Scattering, and Superconductivity in Degenerate Semiconductors

  • K. L. Ngai
  • A. K. Ganguly
Part of the NATO Advanced Study Institutes Series book series (volume 2)


In the initial magneto-optical studies [1] of carrier-two-phonon interactions, henceforth referred to as I, strong coupling between electrons and two non-polar optical (NPO) or TO phonons was observed in InSb. Magneto-optical resonant carrier-phonon(s) coupling effects in the two optical phonon energy region bear clear evidence that 2NP0 phonon interaction occurs with significant strength in InSb. In this work, several other examples are given that corroborate the physical importance of two-phonon deformation interaction in semiconductors. Our main purpose is to show that two phonon-induced intravalley, and/or in-tervalley electron-electron interaction is an important mechanism for superconductivity in low-carrier-density systems such as degenerate semiconductors.


Deformation Potential Large Momentum Transfer Degenerate Semiconductor Total Kernel Optical Phonon Energy 
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  1. 1.
    Ngai, K.L. and Johnson, E.J. (1972). Phys. Rev. Lett., 29, 1607.CrossRefADSGoogle Scholar
  2. 2.
    Holstein, T. (1959). Phys. Rev., 113, 479.MATHCrossRefADSGoogle Scholar
  3. 3.
    Herring, C. (1961). In Proceedings of The International Conference on Semiconductor Physics, Prague, 1960, (Academic Press, New York), p. 60.Google Scholar
  4. 4.
    In reference [1] it was argued that for near zone-edge NPO phonons, detailed cancellation is not probable. However, the assumption made there that only H 2 contributes to two-phonon scattering is unnecessary. Finite contributions to H 1(E — H)- 1 H 1 with intermediate states from all bands exist. Interference is still expected but cancellation is unimportant for InSb type band structure. The results and conclusions of reference [1] remain unchanged.Google Scholar
  5. 5.
    The value of (Dp1/2)L,-L given here differs from 5.6 x 104 eV obtained in reference [1]. This difference is due to: (1) the form of H2.eff in equations (3–5) which does not have the factor 2/3 and, (2) the sums over j and j’ absorbed in the definition of Dp 1/2 in reference [1] are now explicit.Google Scholar
  6. 6.
    Magneto-phonon effects: Stradling, R.A. (1972). Proceedings of the Eleventh International Conference on The Physics of Semiconductors s Warsaw, Poland, 1972, p. 261; Ngai, K.L. (To be published).Google Scholar
  7. 7.
    Free carriers absorption: Ganguly, A.K. and Ngai, K.L. Phys. Rev., (to be published).Google Scholar
  8. 8.
    Mobility of Si: Ngai, K.L., Norton, P. and Henvis, B.W. (To be published).Google Scholar
  9. 9.
    Resonant Raman scattering: (a) Weinstein, B.A. and Cardona, M. Phys. Rev., (to be published); (b) Cardona, M. NATO Simmer School Lecture Notes, Antwerpen, 1973; (c) Ganguly, A.K. and Ngai, K.L. Phys. Stat. Sol., (to be published).Google Scholar
  10. 10.
    Non-resonant Raman scattering: Ngai, K.L. and Ganguly, A.K. (To be published).Google Scholar
  11. 11.
    It is interesting to note a similar situation: the hole-nonpolar-optical-phonon deformation potential for all III-V’s and IV’s are of the same magnitude ~40 eV.Google Scholar
  12. 12.
    Lin-Chung, P.J. and Ngai, K.L. (1972). Phys. Rev. Lett., 29, 1610.CrossRefADSGoogle Scholar
  13. 13.
    Ganguly, A.K. and Birman, J.L. (1967). Phys. Rev., 162, 806.CrossRefADSGoogle Scholar
  14. 14.
    Knox, R.S. (1953). Theory of Excitons, Supplement No. 5 of Solid State Physics, (Academic Press, New York).Google Scholar
  15. 15.
    Cohen, M.L. (1964). Phys. Rev., 134, A511;CrossRefADSGoogle Scholar
  16. 15a.
    Cohen, M.L. (1969). In Superconductivity, (ed. Parks, R.), (Dekker, New York), p. 615.Google Scholar
  17. 16.
    Koonce, C.S., Cohen, M.L., Scholey, J.F., Hosler, W.R. and Pfeiffer, E.R. (1967). Phys. Rev., 163, 380.CrossRefADSGoogle Scholar
  18. 17.
    Allen, P.B. and Cohen, M.L. (1969). Phys. Rev., 177, 704.CrossRefADSGoogle Scholar
  19. 18.
    Mattheiss, L.F. (1972). Phys. Rev., B6, 4718.ADSGoogle Scholar
  20. 19.
    Appel, J. (1969). Phys. Rev., 180, 508.CrossRefADSGoogle Scholar
  21. 20.
    Allen, P.B. (1973). Bull. Amer. Phys. Soc. II, 18, 327.Google Scholar
  22. 21.
    A preliminary report of this mechanism has appeared in an article by Kaplan, R. and Ngai, K.L. Comment. Solid State Phys.. For details see Ngai, K.L. (To be published).Google Scholar

Copyright information

© Plenum Press, London 1974

Authors and Affiliations

  • K. L. Ngai
    • 1
  • A. K. Ganguly
    • 1
  1. 1.Naval Research LaboratoryUSA

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