Abstract
The phenomenon of Raman scattering is known since 1928 but investigations of this effect in semiconductors are relatively recent [1]. While this may be surprising in view of the large amount of basic research in semiconductors since the discovery of the transistor, it is due to the fact that the usual semiconductors (Ge, Si, GaAs, etc.) are opaque to the standard radiation sources. Thus, the scattering volume in which the interaction of the radiation with the solid occurs is small, determined by the penetration depth of the radiation (inverse of the absorption coefficient) which can be as small as a few hundred Å. Therefore, the scattering efficiency is very weak and studies have only become possible with the advent of strong lasers and spectrometers with excellent scattering light rejection. The measurements are usually performed in the back-scattering configuration, in the manner sketched in figure 1.
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References
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© 1974 Plenum Press, London
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Cardona, M. (1974). Resonant Raman Scattering in Semiconductors. In: Devreese, J.T., Kunz, A.B., Collins, T.C. (eds) Elementary Excitations in Solids, Molecules, and Atom. NATO Advanced Study Institutes Series, vol 2. Springer, Boston, MA. https://doi.org/10.1007/978-1-4684-2823-0_10
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DOI: https://doi.org/10.1007/978-1-4684-2823-0_10
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