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High Frequency Properties and Applications of Josephson Junctions from Microwaves to Far-Infrared

  • R. Adde
  • G. Vernet
Part of the NATO Advanced Study Institutes Series book series (NSSB, volume 21)

Abstract

A domain where the Josephson effect may be promising is the very high frequency region (submillimeter and far infrared). The fundamental reason is the very high sensitivity of the Josephson junction (JJ) to any applied electric signal. The second of the two familiar Josephson equations for an ideal junction [1]
$${\text{I }}\left( {\text{t}} \right){\text{ }} = {\text{ }}{{\text{I}}_{\text{c}}}{\text{sin}}\emptyset $$
(1)
and
$${\text{d}}\emptyset /{\text{dt }} = {\text{ }}\left( {{\text{2e}}/} \right){\text{V}}\left( {\text{t}} \right)$$
(2)
shows that a small variation of the applied voltage to a junction leads to a very strong variation of the phase difference between the two electrodes (2e/h = 484GHz/mV). This very high frequency modulation coefficient is a characteristic of the Josephson junction and is responsible for its high nonlinearity. It is exploited in high frequency generation, detection, mixing or parametric amplification. Other characteristics of Josephson junctions are high cut-off frequencies above which the non-linearities get worse for different reasons, and low level intrinsic noise.

Keywords

Point Contact Josephson Junction Tunnel Junction Noise Temperature Schottky Barrier Diode 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Plenum Press, New York 1977

Authors and Affiliations

  • R. Adde
    • 1
  • G. Vernet
    • 1
  1. 1.Institut d’Electronique FondamentaleUniversité Paris-SudOrsayFrance

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