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Infrared Studies of Defects

  • R. C. Newman
Part of the Nato Advanced Study Institutes Series book series (NSSB, volume 19)

Abstract

Semiconductor crystals such as silicon are opaque in the visible region of the spectrum and to investigate defects by optical means it is usually necessary to use long wavelength radiation. A difference between silicon and the compound semiconductors is that there is no intrinsic one phonon absorption (Reststrahl-band) because of the symmetry of the diamond structure. Consequently, apart from relatively weak absorption features due to two and three phonon processes(1), silicon and germanium are transparent from zero frequency up to their fundamental electronic edges, at about 104cm−1 (λ~1μm) for silicon, with an energy gap of 1.1eV, and a somewhat lower frequency for germanium with a gap of 0.65eV. It follows that the presence of extrinsic absorption in the form of discrete bands arising from defects is relatively easy to detect providing any continuum of electronic absorption due to free holes or electrons is negligible. This means that the material that can be examined may contain only a very small concentration of shallow donors or acceptors, or alternatively, there must be a high degree of electrical compensation. In the latter case either one or even both types of defects could be intrinsic in nature rather than impurity atoms.

Keywords

Impurity Atom Gallium Arsenide Infrared Study Vibrational Absorption Gallium Phosphide 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Plenum Press, New York 1976

Authors and Affiliations

  • R. C. Newman
    • 1
  1. 1.J.J. Thomson Physical LaboratoryUniversity of ReadingBerks.UK

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