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EPR Studies of Lattice Defects in Semiconductors

  • G. D. Watkins
Part of the Nato Advanced Study Institutes Series book series (NSSB, volume 19)

Abstract

Lattice defects have been studied by EPR more thoroughly in silicon than in any other semiconductor material. As a result, these lectures will tend to concentrate in large measure on the results found in this material. No discussion will be given specifically to the other elemental materials, although some EPR work has been reported in germanium,1 and quite a bit has been reported in diamond.2 The state of understanding in these materials is still relatively poor and relies heavily upon the insight gained from the silicon studies.

Keywords

Charge State Lattice Defect Hyperfine Interaction Zinc Vacancy Lattice Vacancy 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Plenum Press, New York 1976

Authors and Affiliations

  • G. D. Watkins
    • 1
  1. 1.Department of PhysicsLehigh UniversityBethlehemUSA

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