Application of the Shunted Junction Model to Point-Contact Josephson Junctions

  • Y. Taur
  • P. L. Richards
  • F. Auracher


We have studied the dc I—V characteristics of oxidized Nb—Nb point contacts1 as a function of temperature, contact pressure, and rf power at 36 GHz. Results for junctions which do not show hysteresis have been compared in detail with calculations from the resistively shunted junction (RSJ) model first proposed by McCumber.2 The agreement between the data and the RSJ model, with a constant shunt resistance and including the effects of noise, is significantly better than has been reported for Dayem bridges.3,4


Versus Curve Step Height Differential Resistance Shunt Resistance Finite Slope 
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Copyright information

© Springer Science+Business Media New York 1974

Authors and Affiliations

  • Y. Taur
    • 1
    • 2
  • P. L. Richards
    • 1
    • 2
  • F. Auracher
    • 3
  1. 1.Department of PhysicsUniversity of CaliforniaBerkeleyUSA
  2. 2.Inorganic Materials Research DivisionLawrence BerkeleyBerkeleyUSA
  3. 3.Department of Electrical Engineering and Computer Science and The Electronics Research LaboratoryUniversity of CaliforniaBerkeleyUSA

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