Advertisement

High Current, Fast Turn-on Pulse Generation Using Thyristors

  • John C. Driscoll

Abstract

It will be demonstrated that, contrary to popular belief, the turn-on time of thyristors can be orders of magnitude faster than that of transistors of equivalent voltage capability. This misconception stems from the conventional characterization of thyristors for wide pulse duty in inverter circuits where, of necessity, current densities must be limited to minimize power dissipation. In pulse modulator and GaAs injection laser applications, where pulse widths of at most a few microseconds are the norm, much higher current densities are permissible leading to dramatic improvements in switching speeds. Below, we tabulate the comparative specifications of a conventional inverter grade SCR against those of the device to be described in this paper.

Keywords

Rise Time Switching Speed Emitter Current Density Gate Current High Gate 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

Preview

Unable to display preview. Download preview PDF.

Unable to display preview. Download preview PDF.

References

  1. (1).
    W. Shockley and J. Gibbons, “Current Build-up in Semiconductor Devices”, IRE Proceedings, December 1958.Google Scholar
  2. (2).
    R. Davies, “Data and Calculations of the SCR Turn-on Mechanism,” 8/63, internal G.E. communication.Google Scholar
  3. (3).
    W. Shockley, “Electrons and Holes in Semiconductors,” Van Nostrand, 1950.Google Scholar
  4. (4).
    C. K. Chu, et al, “1,000 Volt and 800 Amp Peak Reverse Switching Rectifier,” 1973, I.A.S. Conference Record, page 267.Google Scholar
  5. (5).
    J. Quine, et al, internal G.E. publication. J. C. DRISCOLLGoogle Scholar

Copyright information

© Plenum Press, New York 1976

Authors and Affiliations

  • John C. Driscoll
    • 1
  1. 1.General Electric CompanyAuburnUSA

Personalised recommendations