High Current, Fast Turn-on Pulse Generation Using Thyristors
It will be demonstrated that, contrary to popular belief, the turn-on time of thyristors can be orders of magnitude faster than that of transistors of equivalent voltage capability. This misconception stems from the conventional characterization of thyristors for wide pulse duty in inverter circuits where, of necessity, current densities must be limited to minimize power dissipation. In pulse modulator and GaAs injection laser applications, where pulse widths of at most a few microseconds are the norm, much higher current densities are permissible leading to dramatic improvements in switching speeds. Below, we tabulate the comparative specifications of a conventional inverter grade SCR against those of the device to be described in this paper.
KeywordsRise Time Switching Speed Emitter Current Density Gate Current High Gate
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