Raman Scattering Technique to Evaluate Losses in GaAs Dielectric Waveguides
Loss measurements in dielectric slab waveguides of GaAs cladded by AℓGaAs epitaxial layers have been made utilizing spontaneous Raman scattering. In these experiments, incident radiation at 1.06 μm is focused onto a cleaved edge of the waveguide layer and Raman-scattered photons are detected at 90°. The attenuation of the resulting signal is measured as a function of the propagation distance along the guide. Spatial resolution of 0.2 to 0.5 mm has been achieved for samples 3 to 8 mm long. Losses from 0.25 to 8.8 cm−1 have been measured to ±0.1 cm−1. The experimental technique is described in detail, and its use illustrated by results obtained for a variety of GaAs waveguide layers.
KeywordsRaman Scattering Raman Peak liQuid Phase Epitaxy Waveguide Layer Spontaneous Raman Scattering
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