Electrical Behavior of Boron-Implanted MOS Transistor
The modified impurity distribution equation which was obtained semi-empirically is proposed for B ion implanted SiO2-Si structure. The experimental results of threshold voltage shift vs back gate bias characteristics were in good agreement with the theoretical values which were obtained with the modified impurity distribution equation.
The diffusion profiles of B which was implanted into SiO2-Si structure are investigated by C -V measurments of MOS diodes and the measurments of threshold voltage vs back gate bias characteristics.
The samples having 1000–1100Å thick SiO2 layer were implanted with B ion of 50 keV to dose of 1–32×1011 cm-2 at room temperature. After B was implanted, the samples were annealed at 1085°C or 1100°C in nitrogen atomosphere.
KeywordsThreshold Voltage Diffusion Profile Mobility Ratio Effective Mobility Threshold Voltage Shift
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