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Noise Characteristics of Ion-Implanted Mos Transistors

  • K. Nakamura
  • O. Kudoh
  • M. Kamoshida
  • Y. Haneta

Abstract

The low frequency noise characteristics of p-channel MOS transistors implanted with 11B+ or 31P+ ions to doses of 1011–1012/cm2 at acceleration energies of 20–150 keV and annealed above 1000°C were investigated. In the case of 11B+-implantation, the noise spectra measured at lower drain current exhibited generation-recombination (G-R) noise components and increased with increasing acceleration energy or implant dose. Corresponding to this, the surface recombination velocity also increased. In the case of 31P+ implantation, however, no G-R noise component was observed and surface recombination velocity was almost constant. At higher drain current, the G-R noise components disappeared and the noise voltages of 11B+-implanted samples decreased., while those of 31P+- implanted samples increased, with reference to the unimplanted sample value. This corresponds to the results of effective mobility measurements.

Keywords

Noise Component Drain Current Surface Recombination Noise Characteristic Noise Voltage 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Plenum Press, New York 1975

Authors and Affiliations

  • K. Nakamura
    • 1
  • O. Kudoh
    • 1
  • M. Kamoshida
    • 1
  • Y. Haneta
    • 1
  1. 1.IC DivisionNippon Electric Co., Ltd.Nakahara-ku, KawasakiJapan

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