Noise Characteristics of Ion-Implanted Mos Transistors
The low frequency noise characteristics of p-channel MOS transistors implanted with 11B+ or 31P+ ions to doses of 1011–1012/cm2 at acceleration energies of 20–150 keV and annealed above 1000°C were investigated. In the case of 11B+-implantation, the noise spectra measured at lower drain current exhibited generation-recombination (G-R) noise components and increased with increasing acceleration energy or implant dose. Corresponding to this, the surface recombination velocity also increased. In the case of 31P+ implantation, however, no G-R noise component was observed and surface recombination velocity was almost constant. At higher drain current, the G-R noise components disappeared and the noise voltages of 11B+-implanted samples decreased., while those of 31P+- implanted samples increased, with reference to the unimplanted sample value. This corresponds to the results of effective mobility measurements.
KeywordsNoise Component Drain Current Surface Recombination Noise Characteristic Noise Voltage
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