Gold Implantation in Silicon: Mos C-V Characterization
Gold-doping by ion implantation offers an attractive alternative to conventional diffusion processes that are currently used to control minority carrier lifetime. This study reports on the effect of gold implantation on the properties of silicon as determined by a C-V analysis of MOS capacitors. The capacitor dielectric was formed by oxidation of the implanted wafer at 900°C. The three effects typical of gold-doping, i.e. substrate compensation, negative interface charge and reduced minority carrier lifetime are all observed. The redistribution of the electrically active gold between the interface and the bulk was studied as a function of dose, anneal temperature and time and substrate orientation and type. In each case, the results were typical of those previously reported for gold-doped capacitors formed by conventional diffusion processes. Gold doping by ion implantation appears to be viable process.
KeywordsMinority Carrier Lifetime Gold Concentration Active Gold Gold Distribution Minute Cycle
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