Limitations of the C-V Technique for Ion-Implanted Profiles

  • C. P. Wu
  • E. C. Douglas
  • C. W. Mueller


A commonly used method for profiling the active impurity concentration in a semiconductor is the differential capacitance technique which relies on the application of the depletion approximation. The present investigation examines in detail the application and limitations of the depletion approximation when the impurity profile varies rapidly as is the case with ion-implanted profiles.


Schottky Diode Doping Profile Impurity Profile Active Impurity Finite Difference Equation 
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Copyright information

© Plenum Press, New York 1975

Authors and Affiliations

  • C. P. Wu
    • 1
  • E. C. Douglas
    • 1
  • C. W. Mueller
    • 1
  1. 1.RCA LaboratoriesPrincetonUSA

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