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Limitations of the C-V Technique for Ion-Implanted Profiles

  • C. P. Wu
  • E. C. Douglas
  • C. W. Mueller

Abstract

A commonly used method for profiling the active impurity concentration in a semiconductor is the differential capacitance technique which relies on the application of the depletion approximation. The present investigation examines in detail the application and limitations of the depletion approximation when the impurity profile varies rapidly as is the case with ion-implanted profiles.

Keywords

Schottky Diode Doping Profile Impurity Profile Active Impurity Finite Difference Equation 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

References

  1. 1.
    D.P. Kennedy, P.C. Murley and W. Kleinfelder, “On the Measurement of Impurity Atom Distributions in Silicon by the Differential Capacitance Technique”, IBM J. Res. Develop. Vol. 12, p.399, 1968.CrossRefGoogle Scholar
  2. 2.
    D.P. Kennedy and R.R. O’Brien, “On the Measurement of Impurity Atom Distributions by the Differential Capacitance Technique,” IBM J. Res. Develop. Vol. 13, p.212, 1969.CrossRefGoogle Scholar
  3. 3.
    R.A. Moline, “Ion-Implanted Phosphorus in Silicon: Profiles Using C-V Analysis”, J. Appl. Phys. Vol. 42, p.3553, 1971.ADSCrossRefGoogle Scholar
  4. 4.
    Y. Zohta, “Rapid Determination of Semiconductor Doping Profiles in MOS Structures,” Solid State Electronics, Vol. 16, p.124, 1973.ADSCrossRefGoogle Scholar

Copyright information

© Plenum Press, New York 1975

Authors and Affiliations

  • C. P. Wu
    • 1
  • E. C. Douglas
    • 1
  • C. W. Mueller
    • 1
  1. 1.RCA LaboratoriesPrincetonUSA

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