Ion Implanted Buried Layers Applied for Nuclear Detector Telescopes

  • A. Kostka
  • S. Kalbitzer

Abstract

Boron doped ion implanted layers have been used to form buried contact layers within n-type silicon single crystals in order to fabricate solid-state ΔE-E detector telescope systems incorporating both their ΔE and E section within the same crystal. With ion energies of 3 and 8 MeV, thicknesses of the energy loss sections amounted to 3.5 and 10 µm, respectively. Spectra obtained with 5.5 MeV α-particles exhibit resolutions of approx. 100 keV (FWHM). Subtraction of noise and energy straggling indicates thickness variations of approx. ± 0.15 µm (Si) over an active area of 6–10 mm2.

Keywords

Phosphorus Boron 

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References

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    F.W. Martin, Nucl. Instr Meth. 72, 223 (1969)CrossRefGoogle Scholar
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    A. Kostka, S. Kalbitzer, Appl. Phys. Lett 23, 704 (1973)ADSCrossRefGoogle Scholar
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    J.P. Ponpon, P. Siffert, F. Vazeille, Nucl. Instr. Meth. 112, 465 (1973)CrossRefGoogle Scholar

Copyright information

© Plenum Press, New York 1975

Authors and Affiliations

  • A. Kostka
    • 1
  • S. Kalbitzer
    • 2
  1. 1.AEG-TelefunkenHeilbronnGermany
  2. 2.Max-Planck-Institut für KernphysikHeidelbergGermany

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