Ion Implanted Buried Layers Applied for Nuclear Detector Telescopes
Boron doped ion implanted layers have been used to form buried contact layers within n-type silicon single crystals in order to fabricate solid-state ΔE-E detector telescope systems incorporating both their ΔE and E section within the same crystal. With ion energies of 3 and 8 MeV, thicknesses of the energy loss sections amounted to 3.5 and 10 µm, respectively. Spectra obtained with 5.5 MeV α-particles exhibit resolutions of approx. 100 keV (FWHM). Subtraction of noise and energy straggling indicates thickness variations of approx. ± 0.15 µm (Si) over an active area of 6–10 mm2.
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