Enhanced Oxidation of Silicon by Ion Implantation and its Novel Applications
The enhancement of the oxidation of silicon due to ion implantation is observed to be significant (about 2.1 times at maximum) in the case of Sb+, P+, Sn+ and Ar+ implant with doses more than 5 × 1014/cm2. The annealing before oxidation does not affect the oxidation rate. The oxidation rate constant B, so called the parabolic constant, is not affected by ion implantation with any dose examined, but the constant A, which refers to linear rate constant, decreases at the dose about 5 × 1014/cm2. It is concluded that the residual damage is less effective, but the chemical effect caused by the implanted ions to the reaction between silicon and oxygen at the interface of Si-SiO2 plays an important role in the enhancement of the oxidation rate. A novel application method of this effect to the fabrication of E/D MOS IC is also shown.
KeywordsOxidation Rate POlY SIlicon Oxide Thickness Oxidation Time Gate Oxide
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