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Enhanced Oxidation of Silicon by Ion Implantation and its Novel Applications

  • K. Nomura
  • Y. Hirose
  • Y. Akasaka
  • K. Horie
  • S. Kawazu

Abstract

The enhancement of the oxidation of silicon due to ion implantation is observed to be significant (about 2.1 times at maximum) in the case of Sb+, P+, Sn+ and Ar+ implant with doses more than 5 × 1014/cm2. The annealing before oxidation does not affect the oxidation rate. The oxidation rate constant B, so called the parabolic constant, is not affected by ion implantation with any dose examined, but the constant A, which refers to linear rate constant, decreases at the dose about 5 × 1014/cm2. It is concluded that the residual damage is less effective, but the chemical effect caused by the implanted ions to the reaction between silicon and oxygen at the interface of Si-SiO2 plays an important role in the enhancement of the oxidation rate. A novel application method of this effect to the fabrication of E/D MOS IC is also shown.

Keywords

Oxidation Rate POlY SIlicon Oxide Thickness Oxidation Time Gate Oxide 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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References

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    A. Monfret et al. Proc. 2nd Intern. Conf. on Ion Implantation in Semiconductors ed. I. Ruge and J. Graul (Springer-Verlag, 1971) p.389.CrossRefGoogle Scholar
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Copyright information

© Plenum Press, New York 1975

Authors and Affiliations

  • K. Nomura
    • 1
  • Y. Hirose
    • 1
  • Y. Akasaka
    • 2
  • K. Horie
    • 2
  • S. Kawazu
    • 2
  1. 1.Kitaitami WorksMitsubishi Electric Corp.ItamiJapan
  2. 2.Central Reseach Lab.Mitsubishi Electric Corp.Minamishimizu, AmagasakiJapan

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